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Semiconductor device and method for forming the same

一种半导体、器件的技术，应用在半导体器件和形成半导体器件领域，能够解决优化、降低器件性能等问题

Active Publication Date: 2020-04-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional transistor layout designs have not been optimized for high-speed IC applications where parasitic capacitance and / or resistance can significantly degrade device performance
[0003] Thus, while existing semiconductor IC devices are generally adequate for their intended purposes, they are not completely satisfactory in every respect

Method used

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  • Semiconductor device and method for forming the same
  • Semiconductor device and method for forming the same
  • Semiconductor device and method for forming the same

Examples

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Embodiment Construction

[0013] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a rel...

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PUM

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Abstract

The first type of semiconductor device includes a first fin structure extending in a first direction, a first gate, and a first slot contact disposed over the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first slot contact has a first slot contact dimension measured in the first direction. A second type of semiconductor device includes: a second fin structure extending in a third direction, a second gate, and a second slot contact disposed over the second fin structure. The second gate extends in a fourthdirection and has a second gate dimension measured in the third direction. The second slot contact has a second slot contact dimension measured in the third direction. The second slot contact dimension is greater than the second gate dimension and greater than the first slot contact dimension. The invention also relates to the semiconductor device and a device for forming the same.

Description

technical field [0001] Embodiments of the present invention provide semiconductor devices and methods of forming semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced several generations of ICs, each of which has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and manufacturing ICs, and in order to realize these advances, similar developments in IC processing and manufacturing are required. In the course of integrated circuit development, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. However, conventional transistor layout designs have not been optimized for high-speed IC appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L27/02
CPCH01L29/7855H01L29/66795H01L27/0203H01L27/0207G06F30/398H01L21/823431H01L21/823437H01L21/823475H01L29/41791H01L27/0886H10B12/36H01L29/785H01L2029/7858H01L23/5226
Inventor 林杰峯林志勇于殿圣杨筱岚廖忠志
Owner TAIWAN SEMICON MFG CO LTD
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