A kind of photomask compensation method
A compensation method and photomask technology, applied in the field of photomask compensation, can solve problems such as insufficient alignment of photomask graphic process compensation, and achieve the effects of easy implementation, compensation of cumulative deviation, and reduction of positional deviation
Active Publication Date: 2022-02-11
CHANGXIN MEMORY TECH INC
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[0003] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a photomask compensation method for solving the problem of insufficient compensation alignment in the photomask pattern process of the prior art
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[0050] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0051]It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include the plura...
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The present invention provides a photomask compensation method, comprising: providing a wafer, the wafer has a first mask pattern, a second mask pattern and a third mask pattern, and the first mask pattern, the The second mask pattern and the third mask pattern respectively have a first position degree, a second position degree and a third position degree, and the vector defining the second position degree to the first position degree is the first vector, defining the vector from the third position degree to the second position degree as a second vector; measuring the first vector and the second vector, according to the combination of the first vector and the second vector The vector compensates the alignment accuracy of the second mask pattern and the third mask pattern respectively, reduces the position error between the mask pattern of the current layer and the mask pattern of the previous layer, and improves the mask pattern of the current layer and the mask pattern of the previous layer. The alignment accuracy of a mask pattern is improved, thereby improving the quality of the photolithography process.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photomask compensation method. Background technique [0002] With the rapid development of semiconductor technology, the feature size of the chip is continuously reduced, so there is a higher requirement for the photomask pattern technology. Specifically, the integrated circuit chip is stacked by many layers of circuit layers, so in the photomask pattern process, the pattern of the current layer and the pattern of the previous layer need higher alignment accuracy, especially in the double exposure pattern (double exposure) ), the photomask pattern of one exposure is usually corrected or compensated, while the other photomask pattern can only be corrected or compensated by manual adjustment. Contents of the invention [0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a photomask compensation method ...
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IPC IPC(8): G03F9/00H01L21/027
CPCG03F9/7003G03F9/7019H01L21/027
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC