Chemically amplified photoresist

A photoresist and chemical technology, applied in the field of photoacid generators, can solve the problems such as the destruction of the rectangular shape of the photoresist pattern and the reduction of the resolution.

Inactive Publication Date: 2003-05-28
NEC ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

With this photoresist material, although the generation of the T-shaped photoresist pattern is suppressed to some extent, another problem arises, that is, the uppe

Method used

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Embodiment Construction

[0020] Preferred embodiments of the present invention are described below.

[0021] In the chemically amplified photoresist of the present invention, a polyhydroxystyrene polymer is used as the matrix polymer, and the polyhydroxystyrene polymer has a protecting group whose polarity is converted by an acid catalyst, for the For the protected polyhydroxystyrene polymers, mixtures of polymers of different average molecular weights were used. That is, a mixture of a protected polyhydroxystyrene polymer having a relatively high average molecular weight (hereinafter referred to as a high molecular weight polymer) and a polymer having a relatively low molecular weight (referred to as a low molecular weight polymer) is used as the present invention. Invented matrix polymer. There is no limit to the number of species of protected polyhydroxystyrene polymers constituting the matrix mixture. However, in the following description it is represented by a high molecular weight polymer and ...

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Abstract

To provide chemically amplified resist which is excellent in resolution, focusing and size accuracy as well by preventing problem of T-shaped resist pattern and reinforcing exposure dependence of solution speed, a mixture of t-BOC protected polyhydroxystyrene polymers having different molecular weight are used as a basic polymer of chemically amplified resist together with PAG. Preferable molecular-weight ratio and mixing ratio of the mixture are 1:5 to 1:20, and 10 to 30 parts by weight of low molecular-weight polymer to 100 parts of high molecular-weight polymer, respectively.

Description

technical field [0001] The present invention relates to chemically amplified photoresists comprising a polyhydroxystyrene polymer having a protecting group, the polarity of which is switched by an acid catalyst, and a photoacid generator. This photoresist can be used as a positive resist, for example, for pattern generation, where the positive resist is formed on a semiconductor substrate, subjected to KrF laser projection exposure through a mask or a master plate, and subjected to PEB (post-exposure baking) treatment , and developed with a developer. Background technique [0002] In the conventional photolithography technology, the positive resist whose solubility is suppressed is mainly used, wherein novolac polymer is used as the matrix polymer, and naphthoquinonediazido is added as the pair g-line (436nm) or I-line (365nm) exposed photosensitizer. However, with the development of fine etching of semiconductor integrated circuits, photolithography methods using extreme ...

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Application Information

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IPC IPC(8): C08F12/22C08L25/18G03F7/00G03F7/039H01L21/027
CPCY10S430/106G03F7/039G03F7/0015G03F7/0392G03F7/0397G03F7/0045G03F7/038G03F7/0757G03F7/38
Inventor 井谷俊郎
Owner NEC ELECTRONICS CORP
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