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Thin film transistor, method for manufacturing the same, and display panel

A technology for thin film transistors and display panels, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as low electron mobility, and achieve the effects of reducing contact resistance, improving electron mobility, and shortening channel paths

Active Publication Date: 2022-08-05
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present application provides a thin film transistor, its manufacturing method, and a display panel to solve the problem of low electron mobility of the existing BCE structure thin film transistor

Method used

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  • Thin film transistor, method for manufacturing the same, and display panel
  • Thin film transistor, method for manufacturing the same, and display panel
  • Thin film transistor, method for manufacturing the same, and display panel

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Embodiment Construction

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application. In the case of no conflict, the following various embodiments and their technical features can be combined with each other.

[0039] figure 1 is a schematic cross-sectional view of the structure of a thin film transistor according to an embodiment of the present application, figure 2 Yes figure 1 A top view of the partial structure of the thin film transistor shown. please combine figure 1 and figure 2 As shown, the thin film transistor 20 includes the following layer structures form...

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Abstract

The present application discloses a thin film transistor, a manufacturing method thereof, and a display panel. The thin film transistor comprises: a gate electrode; an insulating layer on the base substrate and covering the gate electrode; an active layer on the insulating layer and corresponding to the gate electrode; respectively disposed on both sides of the insulating layer; the crystallization inducing metal layer is located on the active layer, the crystallization inducing metal layer is located between the source electrode and the drain electrode, and is spaced from the source electrode and the drain electrode. Based on this, the present application can improve the electron mobility of the thin film transistor.

Description

technical field [0001] The present application relates to the field of display technology, and more particularly, to a thin film transistor, a method for manufacturing the same, and a display panel. Background technique [0002] With the development of display technology, flat display devices such as Liquid Crystal Display (LCD), Organic Light-Emitting Diode (OLED) or Inorganic Light-Emitting Diode, etc., have high image quality, power saving and wide application range. It has been widely used in various consumer electronic products such as mobile phones, TVs, personal digital assistants, digital cameras, notebook computers, desktop computers, etc., and has become the mainstream of display devices. [0003] These display devices usually use thin film transistors (Thin Film Transistor, TFT) to control the signal input to each pixel, which is suitable for processing a huge amount of signals to realize dynamic images, so such display devices are also called TFT flat panel displ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/78696H01L29/66765
Inventor 蔡振飞
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD