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Bulk acoustic wave resonator and its frequency adjustment method, filter, electronic equipment

A bulk acoustic wave resonator and frequency adjustment technology, applied in electrical components, impedance networks, etc., can solve problems such as unsuitable resonator structures

Active Publication Date: 2021-06-01
ROFS MICROSYST TIANJIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the traditional frequency trimming method described is not universally applicable to various resonator structures

Method used

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  • Bulk acoustic wave resonator and its frequency adjustment method, filter, electronic equipment
  • Bulk acoustic wave resonator and its frequency adjustment method, filter, electronic equipment
  • Bulk acoustic wave resonator and its frequency adjustment method, filter, electronic equipment

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Embodiment Construction

[0018] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0019] figure 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. exist figure 1 , the reference signs are as follows:

[0020] 10: Substrate, optional materials are silicon (high resistance silicon), gallium arsenide, sapphire, quartz, etc.

[0021] 20: Acoustic mirror, in Figure 2A-2B The middle is a cavity 20, and a Bragg reflection layer and other equivalent forms...

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Abstract

The invention discloses a bulk acoustic wave resonator, comprising a top electrode with a gap layer, the top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and In the thickness direction of the resonator, the gap layer is formed between the first top electrode and the second top electrode, wherein: the second top electrode is provided with a plurality of frequency trimming channels in the effective area of ​​the resonator, and the frequency The trimming channel passes through the second top electrode and communicates with the gap layer. The present invention also discloses a method for trimming the frequency of the above bulk acoustic wave resonator, the method comprising: bombarding the upper surface of the first top electrode with an ion beam through the frequency adjustment channel to form a pit thereon; or The first passivation layer is bombarded with an ion beam through the frequency adjustment channel to form pits thereon. The invention also discloses a filter and electronic equipment.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, an electronic device with the resonator or the filter, and a bulk acoustic wave resonator Frequency adjustment method. Background technique [0002] Bulk acoustic wave resonators are widely used in various electronic components in the field of modern communications, such as filters, duplexers and so on. Such electronic devices usually have strict or even harsh requirements on the operating frequency of each bulk wave resonator therein. However, when the design dimensions are exactly the same, it is difficult to ensure that the resonator frequency reaches the target operating frequency for the resonators actually processed on a wafer. The electrode / piezoelectric layer thickness and electrode piezoelectricity of every two resonators Layers can vary in size and shape within a range. It can be seen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/17
CPCH03H9/17
Inventor 庞慰徐洋郝龙杨清瑞张孟伦
Owner ROFS MICROSYST TIANJIN CO LTD