A quantum dot single photon source and its preparation method
A single photon source, quantum dot technology, applied in the field of quantum dots, can solve the problems of inability to bond, unstable colloidal quantum dots, limited enhancement, etc., and achieve the effect of high photon rate
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[0046] like image 3 As shown, the present invention also provides a preparation method of a quantum dot single photon source, comprising the following steps:
[0047] S1 provides a substrate layer 1 of pure silicon or gallium arsenide;
[0048] S2 forms a metal layer 2 on the substrate layer 1; forms a metal layer 2 on the substrate layer 1
[0049] S3 forming a dielectric layer 3 on the metal layer 2;
[0050] S4 forms a nanowire quantum dot layer 4 on the dielectric layer 3 using a selective area epitaxy method; the nanowire quantum dot layer 4 sequentially forms a GaAsP nanowire quantum dot layer bottom layer 41 and a GaAs nanowire on the dielectric layer 3 The middle layer 42 of the quantum dot layer, the top layer 43 of the nanowire quantum dot layer of GaAsP;
[0051] S5, on the dielectric layer 3 except for the surface of the nanowire quantum dot layer 4, a layer of silicon dioxide is deposited to the height of the interface between the nanowire quantum dot layer bott...
Embodiment 1
[0057] The quantum dot single photon source in this embodiment is sequentially provided with a substrate layer 1 , a metal layer 2 , a dielectric layer 3 , a nanowire quantum dot layer 4 and a plasmon structure layer 5 from bottom to top.
[0058] The substrate layer 1 is either a pure silicon layer or a gallium arsenide layer, and a metal layer 2 is plated on the upper surface of the substrate layer 1 , and the metal layer 2 is a gold thin film layer with a thickness of 150 nm. The way to achieve this can use electron beam evaporation to precisely control the thickness.
[0059] The upper surface of the metal layer 2 is covered with a dielectric layer 3, and the dielectric layer 3 is specifically a SiO2 or Al2O3 layer with a thickness of 10-30 nm. The dielectric layer 3 can be grown by electron beam evaporation deposition or atomic layer deposition.
[0060] The material of the nanowire quantum dot layer 4 is GaAsP / GaAs, the length of the nanowires is 2-5 microns, the height...
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