Quantum dot single photon source and preparation method thereof
A single photon source and quantum dot technology, applied in the field of quantum dots, can solve problems such as limited enhancement, inability to combine, and instability of colloidal quantum dots, and achieve the effect of changing the optical density of states and high photon velocity
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[0046] Such as image 3 As shown, the present invention also provides a preparation method of a quantum dot single photon source, comprising the steps of:
[0047] S1 provides a substrate layer 1 of pure silicon or gallium arsenide;
[0048] S2 forms a metal layer 2 on the substrate layer 1;
[0049] S3 forming a dielectric layer 3 on the metal layer 2;
[0050] S4 forms a nanowire quantum dot layer 4 on the dielectric layer 3 by selective area epitaxy; the nanowire quantum dot layer 4 sequentially forms a GaAsP nanowire quantum dot layer bottom layer 41 and a GaAs nanowire on the dielectric layer 3 The middle layer 42 of the quantum dot layer, the top layer 43 of the nanowire quantum dot layer of GaAsP;
[0051] S5 deposits a silicon dioxide layer on the surface of the dielectric layer 3 except the nanowire quantum dot layer 4 to the height of the interface between the bottom layer 41 of the nanowire quantum dot layer and the middle layer 42 of the nanowire quantum dot layer...
Embodiment 1
[0057] The quantum dot single photon source in this embodiment is provided with a substrate layer 1 , a metal layer 2 , a dielectric layer 3 , a nanowire quantum dot layer 4 and a plasmonic structure layer 5 sequentially from bottom to top.
[0058] The substrate layer 1 is one of a pure silicon layer or a gallium arsenide layer, and a metal layer 2 is plated on the upper surface of the substrate layer 1, and the metal layer 2 is specifically a gold film layer with a thickness of 150 nm. The way to realize it can use electron beam evaporation to precisely control the thickness.
[0059] The upper surface of the metal layer 2 is covered with a dielectric layer 3, and the dielectric layer 3 is specifically a SiO2 or Al2O3 layer with a thickness of 10-30 nm. The dielectric layer 3 can be grown by electron beam evaporation or atomic layer deposition.
[0060] The material of the nanowire quantum dot layer 4 is GaAsP / GaAs, the length of the nanowire is 2-5 microns, the height of t...
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