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Single-chip full-bridge TMR magnetic field sensor

A magnetic field sensor and chip technology, applied in the field of magnetic field detection, can solve the problems of increasing the complexity of the sensor manufacturing process, the inability to guarantee the consistency of the resistance of each bridge arm, and increasing the cost, so as to achieve good consistency, suppress temperature drift, and reduce production cost effect

Pending Publication Date: 2020-04-21
珠海多创科技有限公司
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Problems solved by technology

However, special equipment is required for local flipping of magnetic domains assisted by laser heating, which not only increases the complexity of the sensor manufacturing process, but also increases the cost, and the push-pull full-bridge sensor made by laser heating cannot be consistent with the resistance of each bridge arm. Guaranteed

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  • Single-chip full-bridge TMR magnetic field sensor
  • Single-chip full-bridge TMR magnetic field sensor
  • Single-chip full-bridge TMR magnetic field sensor

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Embodiment Construction

[0024] In order to make the above and other objects, features and advantages of the present invention more apparent, the following specifically cites the embodiments of the present invention, together with the accompanying drawings, for a detailed description as follows.

[0025] Such as figure 1 As shown, the single-chip full-bridge TMR magnetic field sensor of this embodiment includes four sets of magnetoresistive elements a1, a2, a3, a4, a first bias current branch L1 and a second bias current branch L2. The basic structure of each group of magneto-resistance elements is the same, and 4 groups of magneto-resistance elements are bridge-connected to form a full-bridge structure, and the 4 groups of magneto-resistance elements are respectively located on the four bridge arms of the full-bridge structure. The first bias current branch L1 is connected with the magnetoresistive elements (a1, a2) on two adjacent bridge arms, and the second bias current branch L2 is connected with ...

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Abstract

A single-chip full-bridge TMR magnetic field sensor comprises magneto-resistor elements and a bias current branch, and the magneto-resistor elements are in bridge connection to form a full-bridge structure; each magneto-resistor element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, and the bias current branch inputs a bias current to the bias current layer; and directions of the currents in the bias current layers in the magneto-resistor elements located on adjacent bridge arms are opposite, and the directions of the currents in the bias current layers in the magneto-resistor elements located on the opposite bridge arms are the same. In the invention, the bias current layer is arranged in each magneto-resistor element; the bias current layer is used for changing a magnetization direction of the free layer in each magneto-resistor element, and sensitivity to an external magnetic field is achieved; anda magnetic field sensor can form the full-bridge structure on a single chip at a time, and difficulty and production cost of a single-chip full-bridge magnetic sensor manufacturing process are greatlyreduced.

Description

technical field [0001] The invention belongs to the technical field of magnetic field detection, in particular to a push-pull full-bridge TMR magnetic field sensor. Background technique [0002] TMR (Tunnel Magneto Resistance) element is a new type of magnetoresistance effect sensor that has been applied in industry in recent years. It uses the tunnel magnetoresistance effect of magnetic multilayer film materials to sense magnetic fields. TMR elements and AMR elements and GMR elements that have been widely used Compared with Hall element, it has larger resistance change rate, better temperature stability, higher sensitivity and wider linear range, and compared with AMR element, TMR element does not need additional set / reset coil structure ; Compared with the GMR element, the TMR element has lower power consumption; Compared with the Hall element, the TMR element does not need an additional magnetic ring structure. [0003] The TMR element is also called the magnetic tunnel ...

Claims

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Application Information

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IPC IPC(8): G01R33/09
CPCG01R33/098
Inventor 刘明关蒙萌胡忠强周子尧朱家训黄豪
Owner 珠海多创科技有限公司
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