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A micro LED transfer method and backplane

A transfer method and technology for display backplanes, which are applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of multiple transfers of MicroLEDs, and achieve the effect of reducing production costs, reducing the number of transfers of MicroLEDs, and saving process flow.

Active Publication Date: 2021-11-23
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a Micro LED transfer method and a backplane aiming at solving the problem that Micro LED needs to be transferred multiple times in the production process of the existing Micro LED display backplane.

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  • A micro LED transfer method and backplane
  • A micro LED transfer method and backplane
  • A micro LED transfer method and backplane

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Embodiment Construction

[0039] The present invention provides a Micro LED transfer method and a backplane. In order to make the objectives, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0040] The present invention provides a Micro LED transfer method, such as figure 1 As shown, the Micro LED transfer method includes the steps:

[0041] S100, fabricating a Micro LED die array on a growth substrate;

[0042] Wherein, the production substrate is a low thermal conductivity substrate suitable for making Micro LED chips, such as: spinel substrate, silicon carbide SiC substrate, zinc sulfide ZnS substrate, zinc oxide ZnO substrate, sapphire substrate Or gallium arsenide GaAs substrate, etc.; the p...

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Abstract

The invention discloses a Micro LED transfer method and a backplane. The Micro LED transfer method includes the steps of: manufacturing a Micro LED grain array on a growth substrate, wherein the Micro LED grains include an epitaxial layer and are arranged on the epitaxial layer. The metal layer, the epitaxial layer is attached to the production substrate; the Micro LED grain array is metal-bonded to the display backplane; the Micro LED grain array is peeled off from the growth substrate. The present invention directly uses the growth substrate as a carrier to fabricate the Micro LED grain array, and then directly transfers the Micro LED grain array to the display backplane for fabrication of the display backplane; the whole process only It is necessary to transfer the Micro LED die array once, which reduces the number of transfers, saves the process flow, and reduces the production cost.

Description

technical field [0001] The present invention relates to the technical field of LED packaging, and in particular, to a Micro LED transfer method and a backplane. Background technique [0002] Micro LED is a miniature light-emitting diode, which is a micron-sized LED; Micro LED display backplane has the advantages of high efficiency, high brightness, high reliability, energy saving, small size and thickness, and is a new generation of display technology. The manufacturing process of the existing MicroLED display backplane is as follows: growing epitaxy and metal on the growth substrate, transferring the epitaxy and metal to the transient substrate, fabricating micro-components, picking up the micro-components, and transferring the micro-components to the target backplane , which results in the need for multiple transfers, many process links, and high production costs; therefore, the existing technology still needs to be improved and developed. SUMMARY OF THE INVENTION [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L27/15
CPCH01L27/156H01L33/0095
Inventor 安金鑫李刘中林子平肖守均张雪
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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