Resistive memory based on ferroelectric tunnel junction and its data writing method

Abstract

The invention discloses a resistive variable memory based on a ferroelectric tunnel junction and a writing method of the resistive variable memory. A metal electrode is set as the upper electrode of the resistive variable memory, and a semiconductor substrate is set as the lower electrode of the resistive variable memory. A ferroelectric tunnel junction of the "metal electrode / ferroelectric tunneling layer / semiconductor substrate" type. The ferroelectric tunnel junction realizes non-volatile ultra-fast ferroelectric polarization reversal under the control of pulse voltage, and the resistance state transition speed can be as fast as sub-nanosecond level, and it can still work normally under the high temperature test required by industrial integrated circuits, and The writing current density of resistive memory is low and has the advantage of low power consumption; different polarization states are obtained by applying different pulse voltages, and different tunneling resistance states are formed by adjusting the height and width of the tunneling barrier, so that it can be used in More non-volatile storage states are realized in a single storage unit, so that the resistive variable memory has the advantages of ultra-fast speed, low power consumption, multi-resistance state, non-volatile, etc., and improves the reliability of the resistive variable memory.

Description

technical field [0001] The invention relates to the technical field of memory, and more specifically, relates to a resistive memory based on a ferroelectric tunnel junction and a writing method of the resistive memory. Background technique [0002] With the rapid development of new information technologies such as mobile smart terminals, artificial intelligence, and the Internet of Things, people's demand for storage of massive amounts of information obtained from multiple channels is increasing. Information storage technology has become the key to the development of the information industry. As the next-generation new memory technology, both phase change memory (Phase Change Random Access Memory, PCRAM) and magnetoresistive memory (Magnetic Random Access Memory, MRAM) have the problem of high write current density, while resistive random access memory (Resistive Random Access Memory, RRAM) also has the problem of insufficient reliability. Contents of the invention [00...

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Problems solved by technology

As the next-generation new memory technology, both phase change memory (Phase Change Random Access Memory, PCRAM) and magnetoresistive memory (Magnetic Random Access Memory, MRAM) have the problem of high write current density, while resistive random access memory (Resistive Random Access Memory, RRAM) also has the problem of insufficient reliability

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