Ferroelectric tunnel junction-based resistive random access memory and writing method of resistive random access memory

Abstract

The invention discloses a ferroelectric tunnel junction-based resistive random access memory and a writing method of the resistive random access memory. A metal electrode is set as the upper electrodeof the resistive random access memory; a semiconductor substrate is set as the lower electrode of the resistive random access memory; and therefore, a metal electrode/ferroelectric tunneling layer/semiconductor substrate type ferroelectric tunnel junction can be formed. The ferroelectric tunnel junction realizes nonvolatile ultrafast ferroelectric polarization overturn under the regulation and control of pulse voltage; a resistance state transition speed can be as high as a sub-nanosecond magnitude; the ferroelectric tunnel junction can still work normally under a high-temperature test required by an industrial integrated circuit. The resistive random access memory has the advantages of low write-in current density and low power consumption. Different polarization states are obtained by applying different pulse voltages; different tunneling resistance states are formed by regulating and controlling the height and width of a tunneling barrier, so that more nonvolatile storage states can be realized in a single storage unit, and therefore, the resistive random access memory further has the advantages of ultra-high speed, low power consumption, multiple resistance states, nonvolatileperformance and the like. The reliability of the resistive random access memory is improved.

Description

technical field [0001] The invention relates to the technical field of memory, and more specifically, relates to a resistive memory based on a ferroelectric tunnel junction and a writing method of the resistive memory. Background technique [0002] With the rapid development of new information technologies such as mobile smart terminals, artificial intelligence, and the Internet of Things, people's demand for storage of massive amounts of information obtained from multiple channels is increasing. Information storage technology has become the key to the development of the information industry. As the next-generation new memory technology, both phase change memory (Phase Change Random Access Memory, PCRAM) and magnetoresistive memory (Magnetic Random Access Memory, MRAM) have the problem of high write current density, while resistive random access memory (Resistive Random Access Memory, RRAM) also has the problem of insufficient reliability. Contents of the invention [00...

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Problems solved by technology

As the next-generation new memory technology, both phase change memory (Phase Change Random Access Memory, PCRAM) and magnetoresistive memory (Magnetic Random Access Memory, MR

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