Resistance random access memory based on multiferroic heterostructure

Abstract

The invention provides a resistance random access memory based on multiferroic heterostructure. The resistance random access memory comprises a substrate, a ferromagnetic bottom electrode layer, a ferroelectric barrier layer, a ferromagnetic top electrode layer, an insulating layer, and a contact electrode lead layer, wherein the ferromagnetic bottom electrode layer is arranged on the substrate; the ferroelectric barrier layer is arranged at one side, deviated from the substrate, of the ferromagnetic bottom electrode layer, and the ferroelectric barrier layer partially covers the ferromagneticbottom electrode layer; the ferromagnetic top electrode layer is arranged at one side, deviated from the ferromagnetic bottom electrode layer, of the ferroelectric barrier layer, and the area of theferromagnetic top electrode layer is same as that of the ferroelectric barrier layer; the insulating layer is arranged on the ferromagnetic bottom electrode layer and surrounds the sidewall of the ferroelectric barrier layer and the sidewall of the ferromagnetic top electrode layer; and the contact electrode lead layer is arranged at one side, deviated from the ferroelectric barrier layer, of theferromagnetic top electrode layer. The memory has the features of being fast in writing speed and low in written current density and has multiple non-volatile memory states.

Description

technical field [0001] The invention relates to the technical field of storage, and more specifically, relates to a resistive variable memory based on a multiferroic heterostructure. Background technique [0002] Modern memory is developing towards high density, fast speed, low energy consumption, and safety and reliability. However, the pursuit of high-density characteristics requires the continuous reduction of the size of transistors. When reduced to nanometers, many quantum effects will appear, such as quantum tunneling. At this time, traditional silicon-based semiconductor devices will reach the physical and technological limits, so people need to develop new multifunctional materials and information storage and processing technologies. [0003] Flash memory and hard disk are non-volatile storage devices currently used, and the writing speed is relatively slow, on the order of 10 microseconds or even milliseconds. As the next generation of new memory devices, both phas...

AI Technical Summary

Problems solved by technology

However, ferroelectric random access memory based on ferroelectricity still uses charge as a storage medium, which is difficult to miniaturize for destructive reading

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