A Resistive Variable Memory Based on Multiferroic Heterostructure

Abstract

The present invention provides a resistive variable memory based on a multiferroic heterostructure. The resistive variable memory comprises: a substrate; a ferromagnetic bottom electrode layer disposed on the substrate; a ferromagnetic bottom electrode layer disposed on the ferromagnetic bottom electrode layer The ferroelectric barrier layer on the side away from the substrate, wherein the ferroelectric barrier layer partially covers the ferromagnetic bottom electrode layer; the ferroelectric barrier layer disposed on the side away from the ferromagnetic bottom electrode layer A ferromagnetic top electrode layer, wherein the area of ​​the ferromagnetic top electrode layer is the same as that of the ferroelectric barrier layer; it is arranged on the ferromagnetic bottom electrode layer and surrounds the sidewall of the ferroelectric barrier layer and the insulating layer on the side wall of the ferromagnetic top electrode layer; the contact electrode lead layer arranged on the side of the ferromagnetic top electrode layer away from the ferroelectric barrier layer. The memory has the characteristics of fast writing speed, low writing current density and multiple non-volatile storage states.

Description

technical field [0001] The invention relates to the technical field of storage, and more specifically, relates to a resistive variable memory based on a multiferroic heterostructure. Background technique [0002] Modern memory is developing towards high density, fast speed, low energy consumption, and safety and reliability. However, the pursuit of high-density characteristics requires the continuous reduction of the size of transistors. When reduced to nanometers, many quantum effects will appear, such as quantum tunneling. At this time, traditional silicon-based semiconductor devices will reach the physical and technological limits, so people need to develop new multifunctional materials and information storage and processing technologies. [0003] Flash memory and hard disk are non-volatile storage devices currently used, and the writing speed is relatively slow, on the order of 10 microseconds or even milliseconds. As the next generation of new memory devices, both phas...

AI Technical Summary

Problems solved by technology

However, ferroelectric random access memory based on ferroelectricity still uses charge as a storage medium, which is difficult to miniaturize for destructive reading

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