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Manufacturing method of piezoelectric material composite substrate

A piezoelectric substrate and composite substrate technology, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, the selection of materials for piezoelectric devices or electrostrictive devices, and the selection of device materials, which can solve the problem of insufficient damage. It can solve problems such as ground recovery and residual crystallization, so as to achieve the effects of low manufacturing cost, reduced trimming and good stability.

Active Publication Date: 2020-05-01
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The ion implantation cutting method is prone to damage caused by implanted ions that cannot be fully recovered, and crystal defects remain

Method used

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  • Manufacturing method of piezoelectric material composite substrate
  • Manufacturing method of piezoelectric material composite substrate
  • Manufacturing method of piezoelectric material composite substrate

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Embodiment Construction

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0048] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

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Abstract

The invention provides a manufacturing method of a piezoelectric material composite substrate and relates to the technical field of a high-performance surface acoustic wave filter. The manufacturing method comprises steps that a piezoelectric substrate and a bearing substrate are laminated to form a bonding substrate; thinning and polishing treatment of the piezoelectric substrate is carried out;plasma is adopted to penetrate through open holes in a baffle and bombard an uneven-thickness area on the piezoelectric substrate so as to roughly adjust the uneven-thickness area; the piezoelectric substrate is etched by adopting an ion beam, and the ion beam and the bonding substrate are made to move relatively so as to finely adjust the thickness non-uniform area. The manufacturing method is advantaged in that the piezoelectric film with smaller thickness and smaller thickness uniformity can be obtained.

Description

technical field [0001] The invention relates to the technical field of high-performance acoustic surface filters, in particular to a method for manufacturing a piezoelectric material composite substrate. Background technique [0002] At present, the piezoelectric films used in high-performance SAW filters are very thin, and the methods for obtaining very thin piezoelectric films in the prior art are mainly chemical vapor deposition (CVD) and ion implantation cutting. However, the films obtained by chemical vapor deposition (CVD) have very poor crystallinity. In the ion implantation dicing method, damage caused by implanted ions cannot be fully recovered, and crystal defects remain. [0003] Therefore, it is an urgent technical problem to design a manufacturing method for piezoelectric material composite substrates, which can obtain piezoelectric films with smaller thickness and less uniform thickness. Contents of the invention [0004] The purpose of the present inventio...

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Application Information

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IPC IPC(8): H01L41/02H01L41/18H01L41/27
CPCH10N30/80H10N30/852H10N30/05
Inventor 林志东谢祥政罗捷宋嘉铭杨濬哲
Owner XIAMEN SANAN INTEGRATED CIRCUIT