Gas homogenizing device and semiconductor processing equipment

Abstract

The invention discloses a gas homogenizing device and semiconductor processing equipment. The device comprises a gas inlet piece, a flow homogenizing piece and an exhaust piece, wherein at least two gas inlet channels are formed in the gas inlet piece; at least one first distribution part and a plurality of first flow homogenizing parts are arranged on a first surface of the flow homogenizing piece, and the first distribution part is in communication with the corresponding gas inlet channel and the corresponding first flow homogenizing parts; at least one second distribution part and a plurality of second flow homogenizing parts are arranged on a second surface of the flow homogenizing piece, and the second distribution part is in communication with the corresponding gas inlet channel andthe corresponding second flow homogenizing parts; and the exhaust piece is provided with a plurality of first exhaust parts and a plurality of second exhaust parts, wherein the first exhaust parts arein communication with the corresponding first flow homogenizing parts and a process chamber, and the second exhaust parts are in communication with the corresponding second flow homogenizing parts and the process chamber. The effect that at least two process gases are independent from each other and are uniformly conveyed and distributed to the process chamber can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a gas homogenizer and semiconductor processing equipment. Background technique [0002] The atomic layer deposition process is a thin film deposition method based on the acquisition of monoatomic layer materials and layer-by-layer accumulation controllable. Its biggest feature is the stable thickness of the film layer and the controllable number of growth layers. A film deposition process in the atomic layer deposition process is regarded as a preparation cycle, and a preparation cycle includes four steps: at the process temperature, the first reaction precursor (Precursor) is introduced into the process chamber, and the precursor is on the substrate. Surface adsorption (mainly chemical adsorption) to a saturated state and the formation of active agents (Species); remove (Purge) the first precursor in the process chamber by a certain method (generally includin...

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Problems solved by technology

[0003] Traditionally, in atomic layer deposition equipment, two precursors enter the process chamber alternately through a fast switching valve. After entering the process chamber, a device is required to distribute the precursors to evenly distribute on the substrate surface, that is, uniform flow device, and then reach the surface of the substrate to prepare the atomic film layer. However, the gas homogenizer with traditiona

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