Tungsten-doped vanadium dioxide film, and preparation method and application thereof

A vanadium dioxide and tungsten doping technology, used in ion implantation plating, coating, metal material coating process and other directions, can solve the problem of high phase transition temperature, achieve low phase transition temperature, short sputtering time, convenient The effect of mass production

Inactive Publication Date: 2020-05-08
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned technical deficiencies, propose a tungsten-doped vanadium dioxide film and its preparation method and application, and solve the problem that the phase transition temperature of pure vanadium dioxide film in the prior art is too high, which is unfavorable for human life. The technical problem of phase transformation at suitable temperature

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  • Tungsten-doped vanadium dioxide film, and preparation method and application thereof
  • Tungsten-doped vanadium dioxide film, and preparation method and application thereof
  • Tungsten-doped vanadium dioxide film, and preparation method and application thereof

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preparation example Construction

[0029] Two aspects of the present invention provide a method for preparing a tungsten-doped vanadium dioxide film, comprising the following steps:

[0030] S1: use double-target magnetron sputtering to form a tungsten-doped vanadium film on the surface of the substrate;

[0031] S2: annealing the tungsten-doped vanadium thin film to obtain a tungsten-doped vanadium dioxide thin film.

[0032] In the present invention, double-target magnetron sputtering is adopted, and compared with conventional single-target magnetron sputtering, tungsten atoms and vanadium atoms can be uniformly mixed before sputtering, and the composition uniformity of the obtained tungsten-doped vanadium dioxide film can be improved. , so that the annealed tungsten can be better doped in the room temperature lattice of vanadium dioxide, thereby greatly reducing the phase transition temperature.

[0033] Preferably, the substrate is one of FTO glass, quartz glass, sapphire or mica flakes.

[0034] Preferab...

Embodiment 1

[0046] (1) After cleaning the quartz glass to be plated with detergent, put it into distilled water for ultrasonic cleaning for 20 minutes, then put it into absolute ethanol for ultrasonic cleaning for 35 minutes, and finally put it into absolute ethanol to seal, and take it out to dry during use;

[0047] (2) Place the dried quartz glass substrate in a magnetron sputtering vacuum chamber, use vanadium and tungsten with a mass purity of 99.99% as targets, and pump the vacuum degree of the vacuum chamber to 2.9×10 -3After Pa, the temperature of the substrate was raised to 80°C, the flux of argon gas was controlled to be 200sccm and the working pressure of pre-sputtering was 0.5pa, and argon gas with a mass purity of 99.99% was used as the working gas for vanadium and tungsten targets. Carry out pre-sputtering, wherein, the power of vanadium target is 75W, the power of tungsten target is 10W, and the time of pre-sputtering is 15min; then the flux of argon gas is controlled to be ...

Embodiment 2

[0050] (1) After cleaning the quartz glass to be plated with detergent, put it into distilled water for ultrasonic cleaning for 25 minutes, then put it into absolute ethanol for ultrasonic cleaning for 40 minutes, and finally put it into absolute ethanol to seal, take it out and blow dry when using.

[0051] (2) Place the dried quartz glass substrate in a magnetron sputtering vacuum chamber, use vanadium and tungsten with a mass purity of 99.99% as the target, and pump the vacuum degree of the vacuum chamber to 2.9×10 -3 After Pa, the temperature of the substrate was raised to 80°C, the flux of argon gas was controlled to be 200sccm and the working pressure of pre-sputtering was 0.5pa, and argon gas with a mass purity of 99.99% was used as the working gas for vanadium and tungsten targets. Carry out pre-sputtering, wherein, the power of vanadium target is 75W, the power of tungsten target is 10W, and the time of pre-sputtering is 15min; then the flux of argon gas is controlled ...

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Abstract

The invention discloses a tungsten-doped vanadium dioxide film, and a preparation method and an application thereof. The thickness of the tungsten-doped vanadium dioxide film is 20-40 nm, the phase transition temperature is 25-45 DEG C, and the visible light transmittance is 50-60%. The tungsten-doped vanadium dioxide film is low in phase transition temperature, and can be subjected to phase transition at a temperature most suitable for human life, and meets the requirements of an intelligent glass window; and the preparation method adopting a metal vanadium target and a tungsten target for mixed sputtering at the same time is short in sputtering time, simple, and easy to operate, does not need to add other gas during subsequent annealing, and is convenient for large-scale production.

Description

technical field [0001] The invention relates to the technical field of thin film materials, in particular to a tungsten-doped vanadium dioxide thin film and a preparation method and application thereof. Background technique [0002] With the development of human society, we will face many difficulties and challenges, and climate change will be one of the main challenges we have to overcome in the near future. The rapid rise in global average temperature over the past 40 years has led to increased focus on energy efficiency. To reduce energy consumption, building energy efficiency can be improved through the use of smart windows. The smart window is a window that is coated with a film material with thermochromic properties on the surface of the glass. The film material with thermochromic properties can control the light and heat of the room according to the temperature changes in different seasons, so as to achieve a warm winter and a cool summer. Therefore, the energy cons...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/245C23C14/18C23C14/35C23C14/58
CPCC03C17/002C03C17/245C03C2217/218C03C2217/24C03C2217/70C03C2218/156C03C2218/32C23C14/185C23C14/352C23C14/5806C23C14/5853
Inventor 刘保顺张军
Owner WUHAN UNIV OF TECH
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