Interposer Fabrication Method

Abstract

The invention provides a method for manufacturing an interposer, comprising: disposing an adhesive layer on a carrier plate; disposing a first supporting layer on the adhesive layer; disposing at least one redistribution layer on the first supporting layer; A second support layer is arranged on one redistribution layer; wherein, at least one of the first support layer, at least one redistribution layer and the second support layer is molded and solidified. In the manufacturing method of the interposer provided by the present invention, the first supporting layer, the redistribution layer and / or the second supporting layer are molded and cured, and the molded and cured molding can be performed after the conductive pillars or conductive wires are installed, or can be molded Solidify the mounting holes without drilling holes on the wafer substrate, avoiding damage to the structure of the interposer due to drilling, avoiding cracks on the interposer, and preventing cracks from expanding due to pressure or heating in subsequent processes , to improve the manufacturing pass rate of the interposer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing an interposer. Background technique [0002] At present, with the rapid development of the electronic industry, electronic devices tend to be lighter and thinner in structure, and tend to be more functional and faster in function, and the semiconductor packages installed on the limited substrate area are gradually becoming smaller and thinner. [0003] To further shrink the size of semiconductor devices, interposers with vertical interconnect vias and high-density metal wiring have emerged. [0004] The interposer structure is inserted between the semiconductor chip and the packaging substrate, and several semiconductor chips are arranged side by side on the interposer. Through the through-hole structure, redistribution layer, and micro-bumps in the interposer, chip-to-chip, chip-to-package Higher density interconnection between substrates. [...

AI Technical Summary

Problems solved by technology

In order to shorten the size of the packaged semiconductor, the industry requires the interposer to be as thin as possible. However, due to the thinner interposer, the drilling process will inevitably cause structural damage to the interposer, resulting in cracks. Pressurization or heating promotes crack growth, resulting in rupture and lower product qualification rate

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