Ultra-wideband chaotic laser chip with large key space
A technology of chaotic lasers and key spaces, applied in lasers, laser components, semiconductor lasers, etc., can solve the problems of chaotic transceiver modules that have not yet been applied to large key spaces, achieve high reliability, improve security, and improve key effect of space
Active Publication Date: 2020-05-08
TAIYUAN UNIV OF TECH
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Problems solved by technology
However, photonic-integrated multi-segment semiconductor lasers have not yet been applied to chaotic transceiver modules for large key spaces
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[0028]In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, rather than All the embodiments; based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work all belong to the protection scope of the present invention.
[0029] like figure 1 As shown, the embodiment of the present invention provides an ultra-broadband chaotic laser chip with a large key space, including:
[0030] chip substrate 1-9;
[0031] The lower waveguide layer 1-8 fabricated on the chip substrate 1-9; the lower confinement layer 1-7 fabricated on the lower waveguide layer 1-8;
[0032] The active layer 1-6 fabricated on the lower confinement layer 1-7, the a...
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The invention belongs to the technical field of semiconductor lasers in the technical field of optoelectronic devices, and discloses an ultra-wideband chaotic laser chip with a large key space. The ultra-wideband chaotic laser chip comprises an N electrode layer, a chip substrate, a lower waveguide layer, a lower limiting layer, an active layer, an upper limiting layer, an upper waveguide layer, aP contact layer and a P electrode layer which are arranged in sequence, wherein the active layer comprises a DFB region, a first phase region, a DBR feedback region, an SOA region, a second phase region and a passive waveguide region which are arranged in sequence; a distributed feedback Bragg grating and a DBR feedback grating are arranged at the positions, which correspond to a first DFB regionand a second DFB region, in the upper limiting layer respectively; and the P electrode layer is provided with an isolation trench, and the isolation trench isolates the P electrode layer into electrodes corresponding to the DFB region, the first phase region, the DBR region, the SOA region and the second phase region. According to the invention, ultra-wideband chaotic laser can be generated, thekey space of chaotic optical secret communication is improved, and the safety of a communication system can also be improved.
Description
technical field [0001] The invention belongs to the technical field of semiconductor lasers in the technical field of optoelectronic devices, and in particular relates to an ultra-wideband chaotic laser chip capable of realizing a large key space during secure communication. Background technique [0002] Chaotic optical communication has attracted extensive attention due to its advantages of hardware encryption, compatibility with existing optical communication systems, and suitability for high-speed (Gbit / s) and long-distance (km) secure communication. The key to chaotic optical secure communication lies in the chaotic synchronization between chaotic laser transceivers, which requires that the structural parameters of the receiver and transmitter are completely matched or within a certain range of mismatch (Phys. Rev. E, Vol. 69, P. 056226, 2004). For legal communication parties, the hardware structure parameters of the transceiver are usually used as the key. The larger ...
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Login to View More IPC IPC(8): H01S5/10H01S5/12H01S5/125H01S5/042H01S5/00H04B10/70
CPCH01S5/005H01S5/042H01S5/0427H01S5/1021H01S5/12H01S5/125H04B10/70
Inventor 王安帮李青天郭园园贾志伟王龙生王云才
Owner TAIYUAN UNIV OF TECH