A method for extracting characteristic parameters of igbt performance degradation
A technology of characteristic parameters and extraction methods, which is applied in the direction of instruments, measuring devices, semiconductor working life tests, etc., can solve the problems of online monitoring of unfavorable IGBT performance degradation and the inability to comprehensively contain IGBT performance degradation information, etc.
Active Publication Date: 2021-05-14
XIDIAN UNIV
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Its disadvantages are that first of all, the method adopts only one characteristic parameter of IGBT performance degradation, which cannot comprehensively contain IGBT performance degradation information, and is not conducive to the realization of high-precision online monitoring of IGBT performance degradation.
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[0033] Below in conjunction with accompanying drawing and specific embodiment, the present invention is described in further detail:
[0034] refer to figure 1 , the present invention comprises the following steps:
[0035] Step 1) Collect the detection data of IGBT device performance degradation:
[0036] Keep the case temperature in the range of (268°C, 270°C), and apply a square wave signal to the gate of the IGBT model IRG4BC30K to accelerate the life of the IGBT until the IGBT has a latch-up effect.
[0037] During the life acceleration of the IGBT, the on-state collector-emitter saturation on-state voltage Vce-on of the IGBT in each on / off cycle is collected i , The trailing current of the collector during the time period T in the off state and gate leakage current And the detection data collected in m turn-on / turn-off cycles form a detection data matrix where i=1,2...m, m≥2,t i Indicates the time for collecting data in the i-th on / off cycle, m=710 in this embod...
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The present invention proposes a method for extracting characteristic parameters of IGBT performance degradation, aiming at improving the accuracy of on-line monitoring of IGBT degradation. The implementation steps are: (1) collecting detection data of IGBT performance degradation; (3) Construct the characteristic matrix of IGBT; (4) Carry out kernel principal component analysis on the characteristic matrix; (5) Construct sample set and healthy sample set; (6) Obtain the IGBT characteristic matrix Performance degradation characteristic parameters. Through the kernel principal component analysis of the three degradation characteristics of leakage current fitting coefficient, tailing current fitting coefficient and saturated on-state voltage, redundant information is eliminated, and the contribution rate is used as the weight reference of the weighted Mahalanobis distance. The Mahalanobis distance obtains the IGBT performance degradation characteristic parameters, which improves the accuracy of the IGBT performance degradation characteristic parameters, and the invention can be applied to online monitoring of the IGBT performance degradation.
Description
technical field [0001] The invention belongs to the technical field of reliability of power electronic devices and devices, and relates to a method for extracting characteristic parameters of IGBT performance degradation, in particular to a method for extracting characteristic parameters of IGBT performance degradation based on nuclear principal component analysis and weighted Mahalanobis distance. It is applied to online monitoring of IGBT performance degradation. Background technique [0002] Insulated gate bipolar transistor IGBT (insulated gate bipolar transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor. IGBT has the advantages of high input impedance, fast switching, high current density, and low conduction voltage. It is widely used in civilian fields such as inverters, motor drive control, automobiles, and rail transit. It also has advantages in military fi...
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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2642
Inventor 游海龙胡金宝张金力
Owner XIDIAN UNIV