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Manufacturing process for an optoelectronic device

A technology for optoelectronic devices and formulations, used in chemical instruments and methods, circuits, electrical components, etc.

Pending Publication Date: 2020-05-22
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, there is still some room for further improvement in terms of the preparation of well-defined homogeneous coatings with wavelength converting materials that allow specific tuning of the color distribution, color temperature and color point of wavelength converting devices with sufficient reliability

Method used

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  • Manufacturing process for an optoelectronic device
  • Manufacturing process for an optoelectronic device
  • Manufacturing process for an optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0171] Example 1: IR Curing

[0172] 10 g organopolysiloxazane material A, 15 g phosphor (YGA 200 547) and 50 ml ethyl acetate dispersion were spray coated onto the Excelitas LED package (LED precursor) in three layers each with an average thickness of about 10 μm. After spraying the layers, the LED package is exposed to Figure 8 IR emitter as described in 1min. After 1 min exposure, the coatings were touch dry and the color coordinates were measured. The process was then repeated: three layers were sprayed, the layers were cured by IR exposure and finally the color coordinates were measured. The data obtained from the color point measurements were used to calculate the number of remaining layers necessary to achieve the target color point of x / y=0.400 / 0.377. After spraying the required number of calculated remaining layers (typically 2, 3 or 4) and curing the layers by IR exposure, the LED package was finally cured on a hot plate at 220° C. for 4 h. This procedure was us...

Embodiment 2

[0173] Example 2: UV-C Curing

[0174] Twenty-five LEDs were prepared according to the procedure described in Example 1, except that the IR exposure was replaced by Figure 9 UV-C exposure for 1 min with the UV lamp described in . The results are shown in Table 1. figure 2 Shows the resulting color coordinate shift after final curing, where the color coordinates before final curing were set to zero.

Embodiment 3

[0175] Embodiment 3 (reference embodiment): thermosetting

[0176] Twenty-five LEDs were prepared according to the procedure described in Example 1, except that the IR exposure was replaced by thermal curing on a hot plate at 150°C for 1 min. After thermal curing, the coating was still tacky. The results are shown in Table 1. image 3 Shows the resulting color coordinate shift after final curing, where the color coordinates before final curing were set to zero.

[0177] Table 1 : Standard deviation σ of color coordinates x and y calculated for 25 devices and mean color point shift of x and y coordinates after full curing.

[0178]

[0179]The standard deviation σ of the color coordinates x and y of the IR and UV precured LEDs is much smaller when compared to the heat cured reference LEDs. This demonstrates the usefulness of UV and IR pre-curing during spraying to improve the accuracy of the color point and to reduce the color point shift caused by the final cure at 220 °...

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Abstract

The present invention relates to a process for manufacturing an optoelectronic device, wherein a layer of a formulation containing a silazane polymer and a wavelength converting material is applied toan optoelectronic device precursor, precured by exposure to radiation and then cured. There is further provided an optoelectronic device, preferably a light emitting device (LED) or a micro-light emitting device (micro-LED), which is prepared by said manufacturing process.

Description

[0001] invention technical field [0002] The present invention relates to a method for manufacturing optoelectronic devices, wherein a layer of a formulation containing a silazane polymer and a wavelength converting material is applied to a photovoltaic device precursor and precured by exposure to radiation. This method is carried out two or more times in succession so that a photovoltaic device precursor is obtained comprising two or more precured layers arranged one on top of the other. The precured layer on the optoelectronic device precursor is then cured by exposure to heat or radiation. The invention further relates to an optoelectronic device, preferably a light emitting device (LED) or a micro light emitting device (micro LED), prepared by said manufacturing method. The manufacturing method of the invention allows a cost-effective and fast production of optoelectronic devices in which the respective desired color point of the wavelength conversion can be specifically a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/52H01L33/56
CPCH01L33/501H01L33/504H01L33/52H01L33/56H01L2933/0041H01L2933/005C08G77/54C08G77/62C09K11/02H01L33/502
Inventor R·格罗腾穆勒A·卡萨斯加西亚明奎兰F·基塔C·兰曼F·布鲁门夏恩
Owner MERCK PATENT GMBH