Piezoelectric thin film device
A technology of piezoelectric film and components, which is applied in the direction of electrical components, piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric/electrostrictive devices, etc. Thin films are not suitable for micro-fabrication and other issues, to achieve the effect of reducing residual stress
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Embodiment 1
[0088] An adhesive layer made of Ti was directly formed on the entire surface of the substrate by RF magnetron sputtering in the vacuum chamber. The substrate is a single crystal of silicon, and the surface of the substrate on which the adhesive layer is formed is the (100) plane of silicon. The thickness of the substrate was 625 μm. The thickness of the substrate is uniform. The thickness of the adhesive layer was 0.03 μm. The thickness of the adhesive layer is uniform. The atmosphere in the vacuum chamber is Ar gas. The temperature of the substrate during the formation of the adhesive layer was maintained at 300°C. As a sputtering target, Ti monomer can be used. The input power per unit area of the sputtering target is 9.87W / cm 2 .
[0089] The first electrode layer (lower electrode layer) made of Ni was directly formed on the entire surface of the adhesion layer by RF magnetron sputtering in the vacuum chamber. The thickness of the first electrode layer was 0.3 μm...
Embodiment 2
[0123] The first electrode layer (lower electrode layer) made of Cr was directly formed on the entire surface of the adhesion layer by RF magnetron sputtering in the vacuum chamber. The temperature of the substrate and the adhesive layer during the formation of the first electrode layer was maintained at 500°C. As a sputtering target, Cr alone can be used.
[0124] In a vacuum chamber, the first electrode layer was annealed at 600°C. The duration of the annealing was 10 minutes. The first electrode layer in Example 2 has a body-centered cubic lattice structure. The surface of the first electrode layer in Example 2 is a (110) plane of a body-centered cubic lattice structure.
[0125] The piezoelectric thin film element of Example 2 was produced by the same method as Example 1 except for the above matters. The piezoelectric thin film of Example 2 was analyzed by the same method as in Example 1. The analysis results of Example 2 are shown in Table 1 below.
Embodiment 3
[0127] The first electrode layer (lower electrode layer) made of Pt was directly formed on the entire surface of the adhesion layer by RF magnetron sputtering in the vacuum chamber. The temperature of the substrate and the adhesive layer during the formation of the first electrode layer was maintained at 300°C. As a sputtering target, Pt simple substance was used.
[0128] The annealing method of the first electrode layer in Example 3 is the same as that in Example 1. The first electrode layer of Example 3 has a face-centered cubic lattice structure. The surface of the first electrode layer in Example 3 is a (111) plane of a face-centered cubic lattice structure.
[0129] The piezoelectric thin film element of Example 3 was produced by the same method as in Example 1 except for the above. The piezoelectric thin film of Example 3 was analyzed by the same method as in Example 1. The analysis results of Example 3 are shown in Table 1 below.
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