A laminated busbar structure low in parasitic inductance and suitable for devices connected in parallel

Abstract

The embodiment of the invention provides a laminated busbar structure low in parasitic inductance and suitable for device parallel connection, and belongs to the technical field of high-power electricappliances. The laminated busbar structure comprises an alternating current output conductor layer used for being connected to an alternating current end; a positive bus conductor layer, wherein thepositive bus conductor layer and the alternating current output conductor layer are arranged at intervals; a negative bus conductor layer, wherein the negative bus conductor layer and the positive busconductor layer are arranged at intervals; a ground conductor layer arranged at the bottom layer of the busbar structure and used for grounding; the upper bridge arm switching device is arranged on the alternating-current output conductor layer, the positive bus conductor layer and the negative bus conductor layer in a penetrating mode, and the alternating-current output conductor layer is connected with the positive bus conductor layer through the upper bridge arm switching device; the lower bridge arm switching device is arranged on the alternating-current output conductor layer, the positive bus conductor layer and the negative bus conductor layer in a penetrating mode, and the alternating-current output conductor layer is connected with the negative bus conductor layer through the lower bridge arm switching device; insulating layers are arranged among the AC output conductor layer, the positive bus conductor layer and the negative bus conductor layer.

Description

technical field [0001] The invention relates to the technical field of high-power electrical appliances, in particular to a laminated busbar structure with low parasitic inductance and suitable for parallel connection of devices. Background technique [0002] In high-power power electronic devices, semiconductor switching devices are connected to bus capacitors and AC output terminals through bus bars. The parasitic inductance of the traditional busbar structure is large, and the voltage overshoot is generated at the moment the switching device is turned off, which poses a threat to the safe operation of the switching device, or it is necessary to derate the withstand voltage of the switching device, which reduces the effective utilization rate of its withstand voltage. [0003] In order to improve the power output capability of high-power power electronic devices, it is usually necessary to use multiple semiconductor switching devices in parallel, and the parallel switching...

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Problems solved by technology

[0003] In order to improve the power output capability of high-power power electronic devices, it is usually necessary to use multiple semiconductor switching devices in parallel, and the parallel switching devices are connected through busbars. The traditional busbar structure does not control the parasitic inductance of each branch, resulting in The dynamic current distribution of the switching devices in parallel is uneven. In order to prevent overheating and damage to the devices with heavy loads in the parallel devices, it is necessary to derate the current capacity of the switching devices, which reduces the effective utilization of its current capacity.

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