Enhanced and depletion type integrated power device and manufacturing method thereof

Abstract

The embodiment of the invention provides an enhanced and depletion type integrated power device and a manufacturing method thereof. The enhanced and depletion type integrated power device comprises asubstrate, and an enhanced power device and a depletion type power device which are formed on the substrate. The enhanced power device comprises a first epitaxial structure, a P-type nitride layer which grows on the first epitaxial structure via the first epitaxial growth, and a first N-type semiconductor layer and a first P-type semiconductor layer which are formed on the first epitaxial structure through the second epitaxial growth. The depletion type power device comprises a second epitaxial structure, and a second N-type semiconductor layer and a second P-type semiconductor layer which areformed on the second epitaxial structure through second epitaxial growth. Therefore, based on a charge balance structure of the N-type semiconductor layer and the P-type semiconductor layer formed bythe secondary epitaxial growth, the interface state of the P-type nitride layer after etching is optimized, the excellent saturation current characteristics are obtained, the charge balance structurecan be used as a gate dielectric layer of a depletion type power device, and the gate stability of the depletion type power device is improved.

Description

technical field [0001] The present application relates to the field of semiconductor devices, in particular, to an enhanced and depleted integrated power device and a manufacturing method thereof. Background technique [0002] Gallium nitride material has the advantages of wide band gap, high critical breakdown electric field, high electron saturation velocity, high thermal conductivity, and high concentration of two-dimensional electron gas at the heterojunction interface. It is the third-generation semiconductor material widely used. The working mode of traditional gallium nitride devices is mostly depletion-mode devices, which have the problems of high power consumption and complex design. With the introduction of enhancement-mode devices, it can simplify the circuit and reduce the cost. Among enhancement-mode and depletion-mode integrated devices, gallium nitride-enhanced HEML devices mainly use an etching process to form gate patterns. This method is easy to damage the ...

AI Technical Summary

Problems solved by technology

The working mode of traditional gallium nitride devices is mostly depletion-mode devices, which have the problems of high power consumption and complex design. With the introduction of enhancement-mode devices, it can simplify the circuit and reduce the cost

Among enhancement mode and depletion mode integrated devices, GaN enhancement mode HEML devices mainly use etching process to form gate pattern, this method is easy to damage the interface, produce more interface states, and have poor parameters such as saturation current

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