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Device and method for preventing graphite crucible bottom from damaging heater during taking and mounting of single crystal furnace

A technology for heaters and single crystal furnaces, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of graphite crucible bottom weight, large single crystal single crystal furnace thermal field, easy to damage the main heating to protect the heater and strengthen the protection

Inactive Publication Date: 2020-06-30
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The large single crystal single crystal furnace has a large thermal field, mainly 28 inches and above. The bottom of the graphite crucible is relatively heavy, and it is very close to the main heater, only 1.5-2.5cm. During the process of taking and installing, it is easy to damage the main heater. heater

Method used

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  • Device and method for preventing graphite crucible bottom from damaging heater during taking and mounting of single crystal furnace
  • Device and method for preventing graphite crucible bottom from damaging heater during taking and mounting of single crystal furnace
  • Device and method for preventing graphite crucible bottom from damaging heater during taking and mounting of single crystal furnace

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings, but the present invention is not limited thereto.

[0024] Such as Figure 1-3 As shown, the device for preventing the single crystal furnace from damaging the heater when taking and loading the bottom of the graphite crucible of the present invention includes a steel frame structure 1 composed of three arm beams and three hooks 2 connected to the end of the steel frame structure; wherein, three One end of the arm beams is fixed together, and a handle 14 is respectively installed on the top of each arm beam. Sliding slots 3 are respectively provided at the other end of each arm beam. A through hole 4 is formed on both side walls of the slide groove 3 , and a fixing hole 5 is provided at the bottom thereof. The hook 2 has a fixing part 6 at the upper end, a connecting rod 7 in the middle and a flat head 8 at the lower end. The fixing part 6 is provided with a perforatio...

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Abstract

The invention discloses a device and a method for preventing a graphite crucible bottom from damaging a heater during taking and mounting of a single crystal furnace. The device comprises a steel frame structure composed of three arm beams and three hooks connected to the tail end of the steel frame structure. Wherein one ends of the three arm beams are fixed together, and the other end of each arm beam is provided with a sliding groove; each hook is provided with a fixed part located at the upper end, a connecting rod located in the middle and a flat head part located at the lower end, and the outer side end part of each sliding groove is provided with a combining groove for clamping the connecting rod of a corresponding hook; when the hooks are connected with the steel frame structure, the fixed parts are located in the sliding grooves and connected with the sliding grooves, and the flat head parts of the three hooks are used for hooking the lower edge of the graphite crucible bottom. The purpose of safely taking and installing the graphite crucible bottom is achieved by vertically grabbing the graphite crucible bottom up and down to prevent the heater from being damaged in the process, protection on the main heater is enhanced, and meanwhile unnecessary harm to furnace wiping personnel is prevented.

Description

technical field [0001] The invention relates to a device and a method for preventing a heater from being damaged by taking and loading a graphite crucible bottom of a single crystal furnace, and belongs to the technical field of single crystal silicon drawing. Background technique [0002] The mainstream technology for monocrystalline silicon production is the Czochralski growth method. In the single crystal furnace, the bottom of the graphite crucible is used to carry the graphite crucible, and the bottom of the graphite crucible is supported by a graphite shaft. With the development of the semiconductor industry, the requirements for the diameter of the ingot are also increasing, and a larger thermal field is required to match. The thermal field of the large single crystal single crystal furnace is relatively large, mainly 28 inches and above. The bottom of the graphite crucible is relatively heavy, and it is very close to the main heater, only 1.5-2.5cm. heater. [000...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 连庆伟鲁强姜舰秦瑞锋盖晶虎戴小林吴志强
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD