Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve problems such as increased stability, easy aggregation of abrasive particles and by-products, scratches on polishing pads, etc.

Active Publication Date: 2020-07-07
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The above-mentioned modified silicon dioxide is not easy to agglomerate due to electrostatic mutual repulsion, and its stability is increased. However, when this positively charged silicon dioxide is used as an abrasive particle for silicon polishing fluid, it will interact with negatively charged silicon dioxide. The surface of the silicon wafer is bonded, and it is easy to remain on the surface of the silicon wafer, resulting in poor polishing effect; in addition, during the repeated use of the polishing liquid, the abrasive particles and by-products are easy to agglomerate and accumulate on the polishing pad, resulting in The polishing pad is scratched

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing solution
  • Chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0028] The silica abrasive particles used in the present invention can be purchased on the market, or can be obtained by reacting a silane coupling agent with a sulfonic acid group at the end and silica particles.

[0029] The azole compound used in the present invention is weakly acidic in itself, and has a strong pH buffering capacity in an alkaline environment, so that it can be added to an alkaline polishing solution to form a buffer solution, so that the polishing solution can be recycled in the process of using Has a stable polishing rate.

[0030] Table 1 shows the composition formulations of the chemical mechanical polishing fluids of Examples 1-10 and Comparative Examples 1-2 of the present invention. Wherein, the contents are expressed in mass percent (wt%). Abrasive ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide grinding particles, azole compounds, a pH regulator and water, and is characterized in that the surfaces of the silicon dioxide grinding particles are grafted with an organic matter with sulfonic acid groups at the molecular ends. According to the polishing solution, the stability of polishing solutioncolloid is greatly improved, residues of grinding particles on the surface of a wafer in the polishing process are reduced, and the cyclic utilization rate of the polishing solution is increased.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing silicon. Background technique [0002] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying chips. The grinding head holds the chip and presses the front side of the chip against the polishing pad. When chemical mechanical polishing is performed, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table. At the same time, the chemical mechanical polishing fluid containing abrasive particles is dropped onto the polishing pad, and spread on the polishing pad due to centrifugal action. The chip surface is globally planarized under the dual action of mechanics and chemistry. [0003] At present, the abrasive pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 王晨何华锋李星
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com