Photoacoustic spectrometry detection chip sensor and manufacturing method

A technology for detecting chips and photoacoustic spectroscopy, which is used in color/spectral characteristic measurement, instruments, measuring devices, etc., can solve the problems of poor integration and stability of micro-vibration sensors, and achieve easy production and solution of optical fiber distributed sensing systems. Integration problems, the effect of simple and firm structure

Active Publication Date: 2020-07-10
武汉理通微芬科技有限公司
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Problems solved by technology

[0004] In view of the above problems, the present invention provides a photoacoustic spectrum detection chip sensor based on a planar wa

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  • Photoacoustic spectrometry detection chip sensor and manufacturing method
  • Photoacoustic spectrometry detection chip sensor and manufacturing method

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[0025] Example

[0026] A photoacoustic spectrum detection chip sensor, comprising: a vibration transduction structure 1, an optical waveguide 2 and a phase-shifted waveguide grating 3, the optical waveguide 2 is arranged on the vibration transduction structure 1, and the optical waveguide 2 is a three-layer waveguide layer, including a lining Bottom, light guide layer and cladding layer, the vibration transducer structure 1 is used as the substrate of the optical waveguide 2, the light guide layer of the optical waveguide 2 is rare earth doped silica, the cladding layer of the optical waveguide 2 is silica, and the phase shift The waveguide grating 3 is written in the light guide layer of the optical waveguide 2 .

[0027] Wherein, the optical waveguide 2 is generated on the vibration transduction structure 1 by the mocvd process. The phase-shifted waveguide grating 3 is inscribed in the optical waveguide 2 by UV lithography, and the phase-shifted amount of the phase-shifted...

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Abstract

The invention discloses a photoacoustic spectrometry detection chip sensor and a manufacturing method thereof. The sensor includes: a vibration transduction structure, an optical waveguide and a phaseshift waveguide grating. The optical waveguide is arranged on the vibration transduction structure. The optical waveguide is a three-layer waveguide layer and comprises a substrate, a light guide layer and a cladding layer. The vibration transduction structure is used as the substrate of the optical waveguide, the light guide layer of the optical waveguide is rare earth doped silicon dioxide, thecladding layer of the optical waveguide is silicon dioxide, and the phase shift waveguide grating is etched in the light guide layer of the optical waveguide. The method comprises the following steps: generating an optical waveguide on a vibration transduction structure by adopting a mocvd process; etching a phase shift waveguide grating on the light guide layer of the optical waveguide by adopting a UV photoetching technology. Integration of the sensor and the transduction structure is achieved, the structure is simple and firm, manufacturing is easy, integration with other systems is facilitated, and the integration problem of a traditional optical fiber distributed sensing system can be effectively solved.

Description

technical field [0001] The invention belongs to the field of optical devices and relates to the field of photoacoustic spectrum detection, in particular to a photoacoustic spectrum detection chip sensor and a manufacturing method. Background technique [0002] With the rapid development of science and technology, photoacoustic spectroscopy detection technology has more and more application requirements in biomedicine, industrial production and other fields, especially for gas detection, photoacoustic spectroscopy technology can realize the detection of various toxic and harmful gases Concentration detection. With the continuous improvement of industrial production and environmental monitoring technology, people have higher and higher requirements for the integration and structural performance of photoacoustic spectroscopy gas sensors. In some special application fields, there are not only specific requirements for the sensitivity and precision of the sensor, but also high r...

Claims

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Application Information

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IPC IPC(8): G01N21/17G01N21/25
CPCG01N21/1702G01N21/25G01N2021/1704
Inventor 王如宝郭晓霞刘正铎江仁林
Owner 武汉理通微芬科技有限公司
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