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Integrated structure of crystal resonator and control circuit and integration method thereof

A crystal resonator and control circuit technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problems of large size and difficult integration, and achieve the effect of small size and improved integration.

Active Publication Date: 2020-07-10
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an integration method of a crystal resonator and a control circuit, so as to solve the problem that the existing crystal resonator has a large size and is not easy to integrate

Method used

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  • Integrated structure of crystal resonator and control circuit and integration method thereof
  • Integrated structure of crystal resonator and control circuit and integration method thereof
  • Integrated structure of crystal resonator and control circuit and integration method thereof

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Experimental program
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Effect test

Embodiment 1

[0045] Figure 2a ~ Figure 2g It is a structural schematic diagram of the integration method of the crystal resonator and the control circuit in the first embodiment of the present invention during its preparation process. Each step in this embodiment will be described in detail below with reference to the accompanying drawings.

[0046] In step S100, specifically refer to Figure 2a and Figure 2b As shown, a device wafer 100 is provided, in which a control circuit 110 is formed, and the device wafer 100 is etched to form a lower cavity 120 of the crystal resonator. That is, the lower cavity 120 is exposed from the front surface of the device wafer 100 , and the control circuit 110 is used, for example, to apply electrical signals to both sides of the piezoelectric wafer formed subsequently.

[0047] Wherein, a plurality of crystal resonators can be prepared simultaneously on the same device wafer 100, so a plurality of device areas AA are correspondingly defined on the de...

Embodiment 2

[0095] The difference from Embodiment 1 is that in this embodiment, the upper electrode 230, the piezoelectric wafer 220 and the lower electrode 210 of the piezoelectric resonator plate 200 are all formed on the front surface of the device wafer 100, and the The piezoelectric resonator plate 200 covers the opening of the lower cavity 120, and the formed crystal resonator is electrically connected to the control circuit in the device wafer 100, and then the bonding process is performed so that the upper cavity 310 corresponds to the The side of the piezoelectric resonator plate 200 facing away from the lower cavity 120 constitutes a crystal resonator, thereby realizing the integrated arrangement of the crystal resonator and the control circuit.

[0096] Specifically, in step S300, the method for forming the piezoelectric resonant plate on the device wafer 100 includes:

[0097] First, a lower electrode 210 is formed at a set position on the surface of the device wafer 100; in t...

Embodiment 3

[0111] In Embodiment 1 and Embodiment 2, the piezoelectric resonant plates including the upper electrode, the piezoelectric wafer and the lower electrode are all formed on the substrate or the device wafer. The difference from the above embodiment is that in this embodiment, the upper electrode and the piezoelectric wafer are formed on the substrate, and the lower electrode is formed on the device wafer.

[0112] Figure 3a ~ Figure 3e It is a schematic structural diagram of the method for integrating the crystal resonator and the control circuit in the third embodiment of the present invention during its preparation process. The steps of forming the crystal resonator in this embodiment will be described in detail below with reference to the accompanying drawings.

[0113] In step S100 and step S300, focus on referring to Figure 3a As shown, a device wafer 100 is provided, and a control circuit is formed in the device wafer 100, and a lower electrode 210 is formed on the sur...

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Abstract

The invention provides an integrated structure of a crystal resonator and a control circuit and an integration method thereof. A lower cavity is formed in a device wafer, and an upper cavity is formedin a substrate; the device wafer and the substrate are bonded by using a bonding process, so that a piezoelectric resonance sheet is clamped between the device wafer and the substrate, the lower cavity and the upper cavity are enabled to respectively correspond to two sides of the piezoelectric resonance sheet to form the crystal resonator, and the crystal resonator is enabled to be electricallyconnected with the control circuit, so the integrated arrangement of the crystal resonator and the control circuit can be realized. Compared with a traditional crystal resonator, the crystal resonatorhas the advantages that the size is smaller, the power consumption of the crystal resonator can be reduced, the crystal resonator can be integrated with other semiconductor components more easily, and therefore the integration degree of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an integrated structure of a crystal resonator and a control circuit and an integrated method thereof. Background technique [0002] Crystal resonators are resonant devices made using the inverse piezoelectric effect of piezoelectric crystals. They are key components of crystal oscillators and filters. They are widely used in high-frequency electronic signals to achieve accurate timing, frequency standards, and filtering. An essential frequency control function in signal processing systems. [0003] With the continuous development of semiconductor technology and the popularization of integrated circuits, the size of various components tends to be miniaturized. However, the current crystal resonator is not only difficult to integrate with other semiconductor components, but also the size of the crystal resonator is large. [0004] For example, currently common crystal res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/20
CPCH01L21/77H10N39/00H03H3/02H03H2003/023H03H9/0547H10N30/10516H10N30/073H03H9/19
Inventor 秦晓珊
Owner NINGBO SEMICON INT CORP
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