Method for removing electrostatic charges on surface of wafer

An electrostatic charge and wafer technology, applied in the field of semiconductor manufacturing, can solve problems such as wafer defects, wafer surface electrostatic charge cannot be effectively removed, scrapped, etc., and achieve the effect of preventing electrostatic breakdown

Pending Publication Date: 2020-07-10
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for removing the static charge on the wafer surface, which can solve the problem that the static charge on the wafer surface cannot be effectively removed in the existing etching process, resulting in wafer defects or even scrapping

Method used

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  • Method for removing electrostatic charges on surface of wafer
  • Method for removing electrostatic charges on surface of wafer
  • Method for removing electrostatic charges on surface of wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0024] In this embodiment, the method for removing static charge on the wafer surface, such as figure 1 shown, including the following steps:

[0025] Step S1, pretreat the surface of the wafer rotating at a set speed, and discharge static electricity through the rotation and drainage of the wafer;

[0026] Step S2, cleaning the surface of the wafer.

[0027] Wherein, in step S1, the set speed of the wafer rotation is less than 80 rpm.

[0028] In this embodiment, atomized water or atomized isopropyl alcohol (IPA) is sprayed on the surface of the rotating wafer for pretreatment, and the static charge on the surface is taken away by the rotation of the wafer, and the rotation speed of the wafer can be controlled. Prevent electrostatic breakdown, and then slowly clean the wafer surface with ultra-low resistance water or diluent, so as to completely remove the electrostatic charge on the wafer surface.

Embodiment 2

[0030] In this embodiment, the method for removing static charge on the wafer surface, such as figure 2 As shown, the difference from Embodiment 1 is that in step S1, atomized water is sprayed on the surface of the wafer for pretreatment.

Embodiment 3

[0032] In this embodiment, the method for removing static charge on the wafer surface, such as image 3 As shown, the difference from the first embodiment is that in step S1, atomized isopropanol (IPA) is sprayed on the surface of the wafer for pretreatment.

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Abstract

The invention discloses a method for removing electrostatic charges on the surface of a wafer, and the method comprises the following steps: S1, carrying out preprocessing on the surface of the waferrotating at a set speed, and releasing static electricity through the rotating current lead of the wafer; and S2, cleaning the surface of the wafer. According to the invention, the cleaning liquid canbe prevented from instantaneously contacting the surface of the wafer during wafer cleaning and the electrostatic breakdown effect is prevented from being generated on the surface of the wafer due tohigh-speed rotation of the wafer, so that electrostatic charges on the surface of the wafer can be thoroughly removed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing static charges on a wafer surface in a wet cleaning process of a semiconductor manufacturing process. Background technique [0002] In the wafer manufacturing process technology, in order to obtain the pattern required by the integrated circuit, the pattern on the photoresist must be transferred to the wafer. One of the methods to complete this pattern conversion is to pass the part that is not masked by the photoresist. Selective etch away. The etching method includes dry etching and wet etching. As a commonly used etching method, dry etching has the characteristics of good anisotropy and is suitable for small-scale etching. [0003] In the process of dry etching, etching process conditions such as high power and high plasma density are usually used to form a high etching rate, thereby obtaining high wafer output. Specifically, in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05F3/00H01L21/67
CPCH05F3/00H01L21/67017
Inventor 朱也方
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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