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A kind of single crystal metal foil material and preparation method thereof

A metal foil and polycrystalline metal technology, which is applied in the field of single crystal metal material preparation, can solve problems such as difficult to achieve large-area preparation, and achieve the effect of controllable process and simple operation

Active Publication Date: 2021-07-09
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The preparation of large-area single-crystal two-dimensional materials is the current bottleneck in the preparation and application of two-dimensional materials. Single-crystal metal substrates are important for the growth of single-crystal two-dimensional materials. For example, in Cu(111), Cu(110 ) surface can prepare single-crystal graphene, and on the surface of Cu(110) with specific steps, single-crystal boron nitride can be grown; therefore, the controllable preparation of single-crystal metal substrate is the basis for growing single-crystal two-dimensional materials, but At present, the preparation of single crystal metal usually requires long-term high-temperature annealing, and it is difficult to achieve large-area preparation

Method used

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  • A kind of single crystal metal foil material and preparation method thereof
  • A kind of single crystal metal foil material and preparation method thereof
  • A kind of single crystal metal foil material and preparation method thereof

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preparation example Construction

[0046] refer to figure 1 , is a preparation method of a single crystal metal foil material of the present invention, specifically, a preparation method of a single crystal metal foil material comprises the following steps:

[0047] S100: apply stress on both ends of the polycrystalline metal foil; then perform step S200;

[0048] In this embodiment, the polycrystalline metal foil is first cut into an "I" shape whose two ends are wider than the middle, and a hole is punched in the center of the two ends with a large width, and a tensioner is installed through the hole to apply a certain amount of pulling force to provide Apply a certain amount of stress, the stress size is 0-300Mpa; the specific shape can refer to figure 2 , where F1, F1' are the applied tension, 2 and 4 are holes, and 3 is the annealing target area;

[0049] Preferably, the polycrystalline metal foil has a thickness of 1-100 μm and a size of 1 mm 2 -1000mm 2 , The metal types of the polycrystalline metal ...

Embodiment 1

[0059] Cut a copper foil with a size of 10cm*5cm and a thickness of 25 microns into figure 1 For the shape shown, punch a hole in the punched area, put it into the annealing area of ​​the quartz tube, bend it at 60 degrees with a bending radius of 3 mm, install a stress-lifting device, and then pass in hydrogen gas of 100 sccm and argon gas of 200 sccm as protective gas and The process gas is heated at a rate of 5°C / s, and kept for 60 minutes after the temperature is raised to 1050°C. During the annealing process, the stress gradually increases from 0-30Mpa, and the temperature is lowered to observe the polycrystalline annealing state, as shown in Figure 6a. A single grain is obtained in the annealing target region 3, for Figure 6a Observation of a single grain in the Figure 6b ESBD ​​results plot in .

Embodiment 2

[0061] Cut a copper foil with a size of 10cm*8cm and a thickness of 25 microns into figure 1 For the shape shown, punch holes in the punching area, put them into the annealing area of ​​the quartz tube, bend them at 90 degrees with a bending radius of 1mm, install the pulling device, and then pass in hydrogen gas of 200 sccm and argon gas of 400 sccm as protective gas and The temperature of the process gas is raised at a rate of 5°C / s, and the temperature is kept at 1050°C for 120 minutes. During the heating and annealing process, the stress gradually increases between 0-40Mpa, and the temperature is lowered to finally get Figure 7a As shown in the experimental diagram, observe the grain state on the surface of copper foil after annealing. Figure 7a Observation of a single grain in the annealing target region 3 in Figure 7b ESBD ​​results plot in .

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Abstract

The invention provides a method for preparing a single crystal metal foil, wherein the method comprises the following steps: (1) applying stress to both ends of the polycrystalline metal foil; (2) applying stress to the The polycrystalline metal foil is bent and simultaneously subjected to high-temperature annealing treatment; (3) Stress gradually and quantitatively increased is applied to both ends of the polycrystalline metal foil to obtain a single crystal metal foil. Large-area single-crystal two-dimensional materials can be prepared by the above method; this method is simple and controllable, and can be used for large-scale production.

Description

technical field [0001] The invention belongs to the technical field of single crystal metal material preparation, and in particular relates to a single crystal metal foil material and a preparation method thereof. Background technique [0002] Single crystals play a very important role in the research field of materials. Usually, single crystals can exhibit excellent properties in electricity, magnetism, light, heat, etc., so they can be used as high-performance electronic devices, semiconductor devices, etc. [0003] In the preparation of two-dimensional material thin films, metal materials can usually be used as catalyst substrates for the growth of two-dimensional materials, and the epitaxial relationship between two-dimensional materials and metal substrates and the lattice matching between the two are important The performance of the material is greatly affected. [0004] The preparation of large-area single-crystal two-dimensional materials is the current bottleneck i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/12C30B29/02C30B29/64
CPCC30B1/12C30B29/02C30B29/64
Inventor 黄德萍史浩飞张永娜李昕李占成
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI