Phosphorus-germanium-zinc polycrystal pressurized synthesis device and synthesis method

Abstract

The invention relates to a phosphorus-germanium-zinc polycrystal pressurized synthesis device and synthesis method, wherein the device comprises a main body furnace body and an ampoule; the main bodyfurnace body comprises an inner furnace body, an outer-layer heating device, air pressure control devices, cooling devices and a sealing flange; the interior of the inner furnace body is divided intonine temperature zones in the axial direction, the cooling devices and the outer-layer heating device wrap the periphery of the inner furnace body in a surrounding mode and are arranged at the corresponding positions of the temperature zones of the inner furnace body, and the air pressure control devices are arranged at the two ends of the inner furnace body. The ampoule comprises a protection container, a synthesis container and a crucible; the ampoule is placed in the inner furnace body by taking a limiting spacer as a support; when the device is used for synthesizing phosphorus-germanium-zinc polycrystal, the internal and external pressure difference of the quartz ampoule in the synthesis process is reduced, the explosion risk caused by out-of-control phosphorus saturated vapor pressureis eliminated, and large-batch synthesis can be carried out at a time; the ampoule protection container can limit the position of the synthesis container, the limiting spacer can also play a role ofa supporting frame, and free adjustment can be conducted according to the sizes of different ampoules and the positions of temperature zones.

Description

technical field [0001] The invention relates to the preparation of a phosphorus-germanium-zinc crystal of a nonlinear optical material, in particular to a pressure synthesis device and a synthesis method of a phosphorus-germanium-zinc polycrystal. Background technique [0002] Chalcopyrite semiconductor materials have been recognized by people in the late 1960s to have high transmittance in the far-infrared region and nonlinear optical coefficient, and the application of frequency conversion in the infrared band has also been paid attention to. Its excellent comprehensive performance has become a representative and has attracted widespread attention. Many scholars have studied its crystal properties and synthesis processes. [0003] The saturated vapor pressure of phosphorus increases exponentially with the increase of temperature. At 480°C, the saturated vapor pressure is 4.8atm. When the temperature reaches 500°C, it has reached 7.5atm, and at 520°C, it rises to 11atm. Tha...

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Problems solved by technology

[0004] In order to solve the problems of low synthesis rate and easy explosion during the synthesis process of large quantities of phosphorus-germanium-zinc polycrystals, the present invention provides a pressurized synthesis device for phosphorus-germanium-zinc polycrystals and a synthetic method

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