Non-polar/semi-polar gallium nitride single crystal and its flux method growth method

Abstract

The invention discloses a method for growing a non-polar / semi-polar gallium nitride single crystal by a flux method, comprising: cleaving a gallium nitride wafer along a selected cleavage surface, and dissolving the obtained gallium nitride Wafers are arranged in an array to obtain a gallium nitride single crystal array on the cleavage plane; using the gallium nitride single crystal array on the cleavage plane as a seed crystal, the non-polar / Semi-polar gallium nitride single crystal. Compared with the prior art, in the process of liquid phase epitaxial growth of gallium nitride by the flux method, the present invention uses a non-polar / semipolar gallium nitride single crystal array as a seed crystal with uniform quality to combine and grow gallium nitride through liquid phase epitaxy , obtain high-quality non-polar / semi-polar gallium nitride single crystal, and further use the gallium nitride single crystal for liquid phase epitaxy to obtain non-polar / semi-polar gallium nitride bulk single crystal.

Description

technical field [0001] The invention relates to a method for preparing a nitride single crystal, in particular to a method for growing a nonpolar / semipolar gallium nitride single crystal by a flux method. Background technique [0002] Gallium nitride (GaN) single crystal has excellent physical and chemical properties, and has been widely used in the fields of LED, laser, power electronics, and microwave power devices. Since gallium nitride single crystal is a strongly polarized material, it usually has a polarization field in the growth direction (c-direction). , which can avoid the influence of the internal polarization field of the material and further improve the performance of the device. [0003] Taking m-plane (10-10) gallium nitride as an example, the usual method to obtain m-plane gallium nitride single crystal is to firstly obtain c-plane (1-5cm) c-plane ( 0001) GaN bulk single crystal, and then cut m-plane non-polar / semi-polar GaN single crystal from inside the b...

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Problems solved by technology

[0003] Taking m-plane (10-10) gallium nitride as an example, the usual method to obtain m-plane gallium nitride single crystal is to firstly obtain c-plane (1-5cm) c-plane ( 0001) GaN bulk single crystal, and then cut m-plane non-polar / semi-polar GaN single crystal from inside the bulk single crystal perpendicular to the c-plane (such as figure 1 shown), however, it is more difficult to obtain a c-plane GaN bulk single crystal growth process with a centimeter-level thickness than the growth process for obtaining a c-plane GaN wafer, and the c-plane GaN bulk single crystal with a centimeter-level thickness is diced M-plane gallium nitride will lead to high wafer cost. In addition, due to the quality inhomogeneity in the growth direction of gallium nitride bulk single crystal (for example, as the growth thickness increases, the crystal dislocation density gradually decreases), therefore, Inhomogeneity in the in-plane optoelectronic properties of the obtained m-plane GaN

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