Array substrate, manufacturing method thereof and display device

Abstract

The invention provides an array substrate, a manufacturing method thereof and a display device. The manufacturing method comprises the steps of forming a first conducting layer and a second conductinglayer in a first area and a second area of a substrate, binding pins which are located in the first area and used for being electrically connected with a driving chip are formed, the second conducting layer is located on the side, away from the substrate, of the first conducting layer, and the first area and the second area are spaced; removing the second conductive layer in the second region, and forming a conductive electrode which is located in the second region and is used for being electrically connected with the light-emitting element through a connecting piece; wherein the adhesive force between the first conducting layer and the connecting piece is larger than that between the second conducting layer and the connecting piece, and the second conducting layer is used for preventingthe first conducting layer from being oxidized. The manufacturing method has the advantages that the manufacturing process is simplified, the oxidation resistance of the binding pin is improved, and the adhesive force between the connecting piece and the conductive electrode is improved, so that the light-emitting element is firmly fixed on the array substrate.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Such as figure 1 As shown in FIG. 2 , it is a schematic diagram of a conventional submillimeter light emitting diode (Mini Light Emitting Diode, Mini-LED) backlight module. The traditional submillimeter light-emitting diode backlight module includes: a first metal pattern layer formed on the substrate 100, the first metal pattern layer includes a first conductive member 1011 and a gate 1012; the gate covering the first metal pattern layer and the substrate 100 The insulating layer 102; the active layer 103 formed on the gate insulating layer 102; the second metal pattern layer formed on the side of the active layer 103 away from the substrate 100, the second metal pattern layer includes a second conductive member 1041, a source-drain circuit Pole and conductive ele...

AI Technical Summary

Problems solved by technology

However, the conductive electrode in the second metal pattern layer is difficult to form a solid solution alloy with the MoTiNi alloy layer and the solder paste, and the solder paste has poor adhesion on the MoTiNi alloy layer, resulting in the use of solder paste to bind the submillimeter LED to the conductive electrode. Submillimeter LEDs cannot be bonded securely when on

[0004] Therefore, it is necessary to propose a technical solution to solve the poor adhesion between the MoTiNi alloy layer and the solder paste, which leads to the weak binding of the submillimeter light-emitting diode and the easy oxidation when the outermost layer of the conductive structure used to bind the chip-on-chip film is a copper layer. question

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