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A metal-sam-organic semiconductor composite structure and its preparation method and application in electronic devices

An organic semiconductor, organic semiconductor layer technology, applied in the direction of organic semiconductor device materials, semiconductor devices, semiconductor/solid-state device manufacturing, etc. Heat transfer efficiency, enhancing the effect of the heat transfer process

Active Publication Date: 2022-04-22
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some of the existing methods have not played a role in improving the heat dissipation performance.
Some effects of improving heat dissipation performance are not very good

Method used

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  • A metal-sam-organic semiconductor composite structure and its preparation method and application in electronic devices
  • A metal-sam-organic semiconductor composite structure and its preparation method and application in electronic devices
  • A metal-sam-organic semiconductor composite structure and its preparation method and application in electronic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The molecular formula of SAM is HS(CH 2 ) n CH 3 , where n is 1. Select gold (Au) as the metal material and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as the organic semiconductor material to introduce the preparation process and SAM molecular layer pair Effect of Au-DNTT interfacial heat transfer process. By comparing the interfacial thermal conductance changes caused by different SAM modifications, the effect of the SAM carbon chain length on the interfacial heat transfer performance is shown.

[0049] The preparation process is as figure 2 In the shown method 1, a silicon substrate containing an oxide layer is prepared by a thermal oxidation method. The silicon substrates were cleaned with acetone, isopropanol, and deionized water, and dried in a nitrogen stream. Au is deposited by sputtering on a silicon substrate to prepare a high-purity Au layer.

[0050] After the Au layer is deposited, epoxy resin is used to bond the silicon substrate, and the...

Embodiment 2

[0054] Different from Example 1, n is 4.

Embodiment 3

[0056] Different from Example 1, n is 9.

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PUM

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Abstract

The invention relates to a metal-SAM-organic semiconductor composite structure, a preparation method and an application in electronic devices. Including a metal layer, a self-assembled monolayer, and an organic semiconductor layer, SAM is located between the metal layer and the organic semiconductor layer, and the SAM is composed of a substance whose terminal group is a sulfur group, and the molecular formula is HS (CH 2 ) n R, n is the carbon chain length of the SAM molecule, R is a polar functional group, and the sulfur element of the SAM is connected with the metal layer at the interface through a chemical bond. The preparation method is to prepare the metal layer, immersing the metal layer in the solution of SAM to obtain the metal layer of the SAM film assembled on the surface; and then forming an organic semiconductor layer on the surface of the SAM film. The preparation method of the organic semiconductor layer is a vacuum evaporation method or a silicon substrate deposition transfer method. Significantly improving the heat transfer efficiency at the interface is of great significance for improving the heat dissipation performance of organic electronic devices.

Description

technical field [0001] The invention belongs to the technical field of heat dissipation of electronic devices, and in particular relates to a metal-SAM-organic semiconductor composite structure, a preparation method and an application in electronic devices. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] As a semiconductor material with excellent application prospects, organic semiconductors have been widely used in the manufacture of organic photovoltaic panels, Organic light-emitting diodes, flexible displays, flexible sensors, organic biosensors, organic field-effect transistors and other organic electronic devices. Compared with traditional inorganic semiconductors, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/30H01L51/46H01L51/54H01L51/10H01L51/44H01L51/52H01L51/56H01L51/40H01L51/48
CPCH10K71/00H10K10/80H10K30/80H10K50/87H10K2102/00Y02E10/549
Inventor 王鑫煜樊弘昭
Owner SHANDONG UNIV