Sensor, manufacturing method thereof and photoelectric conversion device
A manufacturing method and sensor technology, which is applied to radiation control devices, circuits, electrical components, etc., can solve the problems of large photodiode area and increased sensor size, and achieve the effect of reduced size and high quantum efficiency
Pending Publication Date: 2020-08-07
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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[0004] This structure usually requires p-type materials and n-type materials to form a p-i-n junction photodiode. In order to obtain a larger photocurrent, the photodiode needs a larger light-receiving area, that is, the area of the photodiode is larger, thereby increasing the photodiode. sensor size
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[0027] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar units are denoted by the same reference numerals.
[0028] Please refer to figure 2 with image 3 , figure 2 It is a schematic structural diagram of a sensor according to an embodiment of the present invention.
[0029] The sensor of this embodiment is an X-ray imaging sensor or an X-ray detector, such as figure 2 As shown, in one embodiment, the sensor of the present invention includes a base substrate 20, a f...
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The invention provides a sensor, a manufacturing method thereof and a photoelectric conversion device. The sensor comprises a substrate, a first grid electrode and a second grid electrode which are arranged on the substrate, a first insulating layer which is arranged on the first grid electrode, the second grid electrode and the substrate; a first active layer and a second active layer which are both arranged on the first insulating layer, a first source electrode and a first drain electrode which are both arranged on part of the first active layer; a second source electrode and a second drainelectrode which are both arranged on part of the second active layer, a light blocking layer which is arranged on the first source electrode and the first drain electrode, and a scintillator layer which is arranged on the light blocking layer, the second source electrode and the second drain electrode, wherein the second source electrode is connected with the first drain electrode, and the lightblocking layer covers the first active layer. According to the sensor, the manufacturing method thereof and the photoelectric conversion device, the size of the sensor can be reduced.
Description
【Technical field】 [0001] The invention relates to the field of display technology, in particular to a sensor, a manufacturing method thereof, and a photoelectric conversion device. 【Background technique】 [0002] Compared with passive pixel sensors, active pixel sensors have received extensive attention because of their higher signal-to-noise ratio. Traditional active pixel sensors are generally divided into two types: direct type and indirect type. Among them, the indirect type active pixel sensor has the advantages of low operating voltage, high scanning speed, low radiation dose and low quantum noise. [0003] like figure 1 As shown, a general indirect active pixel sensor is composed of a thin film transistor 11 (TFT), a photodiode 12 and a scintillator layer 13. The scintillator layer 13 first absorbs X-rays to generate visible light, and then the photodiode 12 converts the light signal into Electrical signal (the propagation direction of light is as figure 1 shown by...
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IPC IPC(8): H01L27/146H01L31/113
CPCH01L27/14658H01L27/14612H01L27/14689H01L31/1136
Inventor 蔡广烁
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD