Advanced photoresist process quality evaluation method and system

A quality evaluation and photoresist technology, applied in the field of photoresist evaluation, which can solve the problems of few measurement parameters, inability to screen photoresist products, and difficulty in extracting the core parameters of photoresist.

Active Publication Date: 2020-08-18
NANJING CHENGXIN INTEGRATED CIRCUIT TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are few measurement parameters, it is difficult to extract more core parameters of photoresist, and it is impossible to screen the best photoresist products

Method used

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  • Advanced photoresist process quality evaluation method and system
  • Advanced photoresist process quality evaluation method and system
  • Advanced photoresist process quality evaluation method and system

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Embodiment Construction

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0040] see figure 1 , the invention provides a method for evaluating the quality of an advanced photoresist process, comprising:

[0041] S101. Perform photolithography on the obtained photoresist to obtain an electron beam microscopic image.

[0042] Specifically, after the obtained photoresist is subjected to deep ultraviolet lithography, an electron beam microscopic image including a dense line structure and a variable period line structure is obtained through an electron beam microscope, such as image 3 The electron beam m...

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PUM

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Abstract

The invention discloses an advanced photoresist process quality evaluation method and system, wherein the advanced photoresist process quality evaluation system comprises an image acquisition module,a contour extraction module, a roughness calculation module, a fitting module, a feature analysis module and a quality evaluation module, wherein the image acquisition module, the contour extraction module, the roughness calculation module, the fitting module, the feature analysis module and the quality evaluation module are connected in sequence to photoetch the acquired photoresist to obtain anelectron beam microscopic image; according to the electron beam microscopic image, extracting the photoresist edge contour, and calculating the edge roughness and the width roughness at the same time;and calculating a power spectral density curve by utilizing a fitting function, obtaining fitting parameters, calculating characteristic parameters of the electron beam microscopic image, and establishing a photoresist quality evaluation table according to the characteristic value of the photoresist, so that an optimal photoresist product can be screened.

Description

technical field [0001] The invention relates to the technical field of photoresist evaluation, in particular to a method and system for evaluating the quality of an advanced photoresist process. Background technique [0002] Photoresist is the key material of integrated circuit technology. The quality of photoresist directly determines the process quality and defects. The core parameters that affect the quality of photoresist process include: photoresist resolution, roughness and light sensitivity. Resolution refers to the minimum pattern size that photoresist can achieve, roughness refers to the uniformity of the edge of photoresist imaging pattern, and light sensitivity refers to the response sensitivity of photoresist to different light intensities during development. Generally speaking, for To enable photoresist to be fully applied to the actual manufacturing process, process quality assessment is often performed before mass production. The traditional method is to perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06T7/00G06T7/13G03F7/20
CPCG06T7/0004G06T7/13G03F7/70625G06T2207/10061G06T2207/20056G06T2207/30148Y02P90/30
Inventor 张利斌韦亚一董立松粟雅娟陈睿张世鑫
Owner NANJING CHENGXIN INTEGRATED CIRCUIT TECH RES INST CO LTD
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