Memory and forming method thereof

Abstract

The invention provides a memory and a forming method thereof. The width of a first bit line located at an edge position in a bit line group is greater than the width of a second bit line arranged in the bit line group, so that when the bit line group is prepared, the morphology of the first bit line can be guaranteed, and the morphology precision of the second bit line can be improved under the blocking protection of the first bit line with larger width, thereby being beneficial to improving the device performance of the formed memory. Similarly, as the width of the first contact part locatedat the edge position in the plurality of node contact parts is larger than that of the second contact part, the morphology of the first contact part can be correspondingly ensured, the pattern precision of the second contact part is improved, and the device performance of the formed memory is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] A memory, such as a dynamic random access memory (DRAM), generally has a memory cell array, and the memory cell array includes a plurality of memory cells arranged in an array. And, the memory also has a plurality of bit lines, each of which is electrically connected to a corresponding memory unit, and the memory also includes a storage capacitor for storing charges representing stored information, and the The storage unit can be electrically connected to the storage capacitor through a node contact, so as to realize the storage function of each storage unit. [0003] At present, a method for forming a memory generally includes: forming a bit line group, and using the bit line group to define a node contact window, and then filling the node contact window with a conductive material to form a node contact...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a memory to solve the problem that the bit line and node contact at the edge of the existing memory are prone to abnormal morphology, thereby affecting the performance of the memory

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