Unlock instant, AI-driven research and patent intelligence for your innovation.

Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

A chemical vapor deposition, atomic layer deposition technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as increasing resistivity

Pending Publication Date: 2020-09-11
MERCK PATENT GMBH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oxygen co-reactants react undesirably with underlying films such as metals and liners and increase their resistivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods of vapor deposition of ruthenium using an oxygen-free co-reactant
  • Methods of vapor deposition of ruthenium using an oxygen-free co-reactant
  • Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0152] Example 2 - Using (DMBD)Ru(CO) 3 and hydrazine of ruthenium without O 2 ALD (saturation data)

[0153] In the same ALD / CVD reactor described in Example 1 with the same (DMBD)Ru(CO) 3 The precursor setup deposited oxygen-free ruthenium and heated it to about 40°C for bubbler delivery with 20 seem Ar carrier gas flow and 30 seem Ar for purge. The anaerobic co-reactant hydrazine was delivered by vapor pumping with 20 seem Ar carrier gas and 30 seem Ar purge gas at room temperature (20°C-30°C) without heating. Unless otherwise indicated, (DMBD)Ru(CO) 3 The pulse time is typically 1 second and the purge time is 5-10 seconds, the hydrazine co-reactant pulse time is 0.075 seconds and the purge time is 5-10 seconds. The standard deposition pressure is 0.3 Torr. for image 3 and Figure 4 , with a deposition temperature of 225 °C and 500 cycles, each cycle having a range from The Ru thickness. image 3 and Figure 4 The hydrazine co-reactant and (DMBD)Ru(CO) 3 AL...

Embodiment 3

[0154] Example 3 - Using (DMBD)Ru(CO) 3 and hydrazine of ruthenium without O 2 ALD (nucleation and linear growth)

[0155] The same procedure as in Example 2 was carried out, except Figure 5 of 225°C and Figure 6 Different deposition temperatures (or substrate temperatures) of 250°C.

[0156] Figure 5 and Figure 6 shows that with O 2 Process-like short extrapolated nucleation delay (≤8 cycles), on SiO 2 and Al 2 o 3 similar growth rate and nucleation behavior, and a sufficiently high growth rate: about / cycle, at 250°C up to / cycle.

Embodiment 4

[0157] Example 4 - Using (DMBD)Ru(CO) 3 and hydrazine or ammonia for ruthenium without O 2 ALD (XPS composition of as-deposited film)

[0158] The same procedure as in Example 2 was carried out on the hydrazine co-reactant, except Figure 7A-Figure 7E at different deposition temperatures from 200°C to 300°C. For such as Figure 7F Deposition of the oxygen-free ruthenium shown using the ammonia co-reactant was performed in the same ALD / CVD reactor as described in Example 2, where (DMBD)Ru(CO) 3 Bubbler delivery heated to about 40°C for 1 sec pulse and 5 sec purge (50 sccm Ar) and ammonia delivered at 35 sccm with 3 sec pulse time and 6 sec purge time (30 sccm Ar). The deposition pressure of the ammonia ALD process was 0.3 Torr and the deposition temperature was 250 °C for 700 cycles, where the Ru thickness was ca. (via XRF). The growth rate using ammonia is about / cycle (approximately 1 / 3 that of hydrazine at 250°C), and the resistivity after annealing is approxima...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Methods of forming ruthenium-containing films by atomic layer deposition and / or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-C6-alkyl, alkoxy and NR1R2; R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.

Description

technical field [0001] The present invention relates to methods of forming ruthenium (Ru)-containing films by atomic layer deposition (ALD) and / or chemical vapor deposition (CVD). Background technique [0002] Various precursors are used to form thin films, and a variety of deposition techniques have been employed. Such techniques include reactive sputtering, ion-assisted deposition, sol-gel deposition, chemical vapor deposition (CVD) (also known as metal-organic CVD or MOCVD), and atomic layer deposition (also known as atomic layer epitaxy). CVD and ALD methods are increasingly used because of their advantages of enhanced composition control, high film uniformity, and effective doping control. Furthermore, CVD and ALD methods provide outstanding conformal step coverage for the highly non-planar geometries associated with modern microelectronic devices. [0003] CVD is a chemical process in which precursors are used to form thin films on the surface of a substrate. In a t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/56C23C16/455
CPCC23C16/18C23C16/45553C23C16/56C23C16/45527
Inventor 雅各布·伍德拉夫刘国拉文德拉·坎乔利亚
Owner MERCK PATENT GMBH