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A Design Method of Transistor Array Structure Based on Rapid Reliability Test

A transistor array and structure design technology, applied in the field of semiconductor device testing, can solve the problem that the needle depth of different devices cannot be guaranteed to be the same, increase uncertainty, take up test time, etc., to shorten the test cycle, optimize the utilization, and realize the test time. Effect

Active Publication Date: 2021-12-07
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there is a basic characteristic test in the early stage of the reliability test. During the test, the needle insertion path must be re-planned according to the integration level on the circle, including the small needle lifting and needle insertion time in the middle. If multiplied by the total number of tests, it will also take up a lot of test time. , and the needle penetration depth of different devices cannot be guaranteed to be the same, which adds uncertainty to the results of reliability tests

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  • A Design Method of Transistor Array Structure Based on Rapid Reliability Test
  • A Design Method of Transistor Array Structure Based on Rapid Reliability Test
  • A Design Method of Transistor Array Structure Based on Rapid Reliability Test

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[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0027] A method for designing a transistor array structure based on a rapid reliability test proposed by the present application includes the following steps:

[0028] (1) A metal-oxide-semiconductor field effect transistor MOSFET is used as a single-tube structure.

[0029] (2) Arrange a number of single-tube...

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Abstract

The invention discloses a method for designing a transistor array structure based on rapid reliability testing. The method adopts a metal-oxide-semiconductor field-effect transistor as a single-tube structure; a plurality of single-tube structures are arranged in a matrix, and a local shared gate is used respectively. In addition to the treatment of partially sharing the drain, the source and the substrate are respectively connected as a whole to form a transistor array structure, and the reliability test is carried out for the array structure. The invention significantly reduces the number of pad structures used for testing, significantly improves the overall utilization rate of the wafer, and at the same time can freely select a large area of ​​devices for testing according to different requirements, realizes the optimal utilization of testing time, and realizes the testing cycle from the root. The greatly shortened to achieve the effect of rapid testing.

Description

technical field [0001] The invention belongs to the field of semiconductor device testing, and in particular relates to a method for designing a transistor array testing structure to quickly complete the reliability testing when responding to the reliability testing requirements of semiconductor devices. Background technique [0002] Existing integrated circuits generally refer to semiconductor integrated circuits, which refer to semiconductor materials (Si, Ge, etc.) Miniaturized circuits that are born inside, on the surface of the substrate, or on the substrate to meet the needs of specific circuit or system functions. With the continuous development of Moore's Law, the feature size of integrated circuit devices has been continuously reduced, the number of metal wiring layers has increased, and the related reliability requirements have continued to increase. For integrated circuits, reliability testing is always related to integrated circuit design and process development....

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2621G01R31/2642
Inventor 赵毅应迪
Owner ZHEJIANG UNIV