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Method for growing atypical tertiary dendrites in directionally solidified peritectic alloy

A directional solidification, atypical technology, applied in computer materials science, instrumentation, informatics, etc., can solve problems such as undiscovered tertiary dendrite arm growth

Active Publication Date: 2020-09-18
LANZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, generally speaking, the tertiary dendrite arms grow upward during directional solidification, and it has not been found that the tertiary dendrite arms grow in the direction of lower temperature.

Method used

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  • Method for growing atypical tertiary dendrites in directionally solidified peritectic alloy
  • Method for growing atypical tertiary dendrites in directionally solidified peritectic alloy
  • Method for growing atypical tertiary dendrites in directionally solidified peritectic alloy

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Embodiment

[0142] First, the as-cast Sn-40at.%Mn alloy was induction melted from pure manganese and pure tin with a purity of 99.9%. Rods with a diameter of 3 mm and a length of 110 mm were then cut from the ingot. During directional solidification, the rod is first placed in the Al 2 o 3 tube, and the temperature of the rod was raised to 800°C to melt it, and then the sample was left to stand in a Bridgman type furnace for 30 minutes. Second, the rods were grown at a range of growth rates: 5 μm / s, 10 μm / s, 30 μm / s, 50 μm / s and 100 μm / s. Thirdly, when the growth distance reaches 50mm, put the tube into liquid Ga-In-Sn alloy for quenching. From the PtRh30-PtRh6 temperature curve, the temperature gradient close to the solid / liquid interface is 21K / mm. The samples were thereafter sliced ​​and polished for further analysis by scanning electron microscopy (SEM (Quanta-200)).

[0143] Equilibrium solidification of Sn-40at.%Mn alloy at T L = At 745°C, Mn is mainly precipitated 2-x Sn pha...

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Abstract

The invention discloses a method for growing atypical tertiary dendrites in directionally solidified peritectic alloy, comprising the following steps of: firstly establishing a theoretical model according to the characteristics of the atypical tertiary dendrites for analysis and calculation; then obtaining a result according to the analysis and calculation; and finally selecting the peritectic alloy meeting conditions, and combining the calculation of the solidification speed and the remelting speed of the lower edge of the rough secondary dendrite arm to select proper directional solidification process parameters to realize the growth of the atypical tertiary dendrite arm. According to the invention, a relevant model is established for analysis and calculation, the mechanism of atypical tertiary dendrite formation is explained, and the directional solidification process parameters are improved by combining the analysis and calculation results to realize the improvement of the specificmechanical properties of the material.

Description

technical field [0001] The invention relates to the field of growth of atypical tertiary dendrites, in particular to a method for growing atypical tertiary dendrites in directionally solidified peritectic alloys. Background technique [0002] Peritectic reactions are widespread in many structural and functional materials. For example, the preparation process of common stainless steel, magnetic materials, or permanent magnetic alloy materials, high-temperature superconducting materials, aerospace materials, etc. is closely related to the peritectic reaction. Dendrite structure is a very common organizational structure in solidification, especially for systems with relatively low solidification entropy. In general, the dendrite structure consists of primary dendrites, secondary dendrites, and even tertiary dendrites or higher order dendrites. Since the applied temperature gradient will affect the morphology of dendrites, and the direction of dendrite growth has a significant...

Claims

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Application Information

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IPC IPC(8): G16C10/00G16C60/00C22C1/02C22C13/00C22F1/16
CPCG16C10/00G16C60/00C22C1/02C22C13/00C22F1/002C22F1/16Y02P10/25
Inventor 彭鹏岳锦绵张安桥张旭东徐远丽马智琨
Owner LANZHOU UNIVERSITY
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