Monitoring mechanism of ICP high-density plasma etching machine

Abstract

The invention discloses a monitoring mechanism of an ICP high-density plasma etching machine. The monitoring mechanism comprises an etching machine body, a front-and-back moving mechanism is arrangedon the left side of the etching machine body, a left-and-right moving guide mechanism is arranged above the etching machine body, a first left-and-right moving mechanism and a second left-and-right moving mechanism are arranged in an inner cavity of the left-and-right moving guide mechanism, and an etching substrate is fixedly connected to the top of the etching machine body. As the front-and-backmoving mechanism is arranged, the monitoring equipment can move along with the left-and-right moving guide mechanism; therefore, a connecting wire between the monitoring equipment and the second left-and-right moving mechanism does not need to be too long; therefore, accidents caused by winding of the connecting wire are not likely to happen, damage to the etching machine can be reduced, the service life of the etching machine is prolonged, the first left-and-right moving mechanism can be controlled to blow-dry liquid medicine deposited on the etching machine through wind power, the surface of the etching substrate can be rapidly dried, and subsequent use is also facilitated.

Description

technical field [0001] The invention relates to the technical field of etching machines, in particular to a monitoring mechanism of an ICP high-density plasma etching machine. Background technique [0002] Etching machines are mainly used in aviation, machinery, and signage industries. Etching machine technology is widely used in the processing of weight-reducing instrument panels, nameplates, and thin workpieces that are difficult to process with traditional processing methods. In semiconductor and circuit board manufacturing processes, Etching is an indispensable technology. It can also etch patterns, patterns, and geometric shapes on the surface of various metals such as iron, copper, aluminum, titanium, stainless steel, zinc plates, and other metals and metal products, and can accurately Hollowing, can also be professionally etched and thin plate cutting for various types of domestic and imported stainless steel, now widely used in gold card sign processing, mobile phone...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a monitoring mechanism for an ICP high-density plasma etching machine, which has the advantages of shortening the length of the connection, reducing the frequency of accidents and quickly drying the deposition potion, and solving the problem that the monitoring device on the traditional etching machine is fixed in a position, it cannot be moved, but the chemical spraying device on the etching machine can be moved. In order to make the spraying device move smoothly, the connecting line between the control device and the spraying device needs to be very long, and the connecting line If it is too long, it is easy to be entangled together, and accidents are prone to occur, which will not only cause damage to the etching machine, but also threaten the safety of users. There will be residues and deposits, and it is not easy to dry, which will affect the next etching effect and reduce the etching efficiency

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