System for reducing leakage current of SRAM (Static Random Access Memory) by self-adapting process voltage and temperature

Abstract

The invention discloses a system for reducing leakage current of a static random access memory (SRAM) by self-adapting to process voltage and temperature, and belongs to the technical field of basic electrical elements. The system comprises a process voltage and temperature monitoring module, a voltage regulation module, a dummy load module, a switching tube module, a power tube module and a stateswitching control signal generation circuit module. After electrification, the whole system starts to work; the process voltage and temperature monitoring module outputs reference voltage values under the current process and temperature, and can resist certain power supply voltage fluctuation; in the switching process of entering sleep, the dummy load firstly works to stabilize the voltage regulation loop, pre-regulate the grid voltage of the power tube module, reduce the undershoot of the SRAM power supply voltage in the switching process, and then the dummy load is turned off; the SRAM canthoroughly enter a sleep mode after being regulated by the voltage regulation module and the power supply voltage is close to the output of the process voltage and temperature monitoring module. According to the invention, the SRAM power supply voltage can be adjusted to the optimal value in a self-adaptive manner under different process voltage and temperature conditions, so that the leakage current is reduced.

Description

technical field [0001] The invention discloses a system for reducing the leakage current of a static memory SRAM with an adaptive process voltage and temperature, relates to the memory technology, and belongs to the technical field of basic electrical components. Background technique [0002] In the actual application scenario of the chip, the chip may work in different modes, and common modes include high-performance mode, low-performance mode, and hold mode. In these common modes, the leakage current consumption of the chip is different. In order to prolong the working time of the battery, it is very important to reduce the leakage current. The suppression effect of the leakage current directly affects the life of the battery. Usually, the time of the system in the sleep or hold mode is much longer than the time of the dynamic work of the system. Therefore, reducing the leakage current in the hold mode is of great significance to the reduction of the overall leakage curren...

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Problems solved by technology

[0004] The purpose of the present invention is to address the deficiencies of the above-mentioned background technology, to provide a system for reducing the leakage current of static memory SRAM through adaptive process voltage and temperature, and to fit the actual minimum data retention of SRAM through a process voltage and temperature monitoring module with a small area overhead Voltage, combined with the closed loop composed of the voltage regulation module, switch tube module and dummy load module, reduces the voltage undershoot when the SRAM is switched to the sleep state, and solves the problem that the traditional low-leakage SRAM cannot be adaptively and accurately adjusted under different process voltage and temperature conditions The technical problem of power supply voltage when SRAM sleeps, while ensuring lower area and power consumption overhead, and can reduce the power supply voltage undershoot when SRAM switches from dynamic working mode to sleep mode

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