Unlock instant, AI-driven research and patent intelligence for your innovation.

Inner insulating packaging structure and process method thereof

A technology of packaging structure and internal insulation, which is used in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of increased thermal resistance and increased cost, and achieves easy mass production, reduced material costs, and reduced production. cost effect

Active Publication Date: 2021-06-08
MACMIC SCIENCE & TECHNOLOGY CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution is more reliable than the external ceramic chip solution, and it is easier to achieve mass production, but this solution adds a layer of soldering layer, which will increase the thermal resistance, and the cost of the other two thick frames will also increase.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inner insulating packaging structure and process method thereof
  • Inner insulating packaging structure and process method thereof
  • Inner insulating packaging structure and process method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention is made based on the research and cognition of the following problems:

[0022] Such as figure 1 As shown, in the sandwich internal insulation scheme, the chip 101 to the copper frame 102, the copper frame 102 to the double-sided copper-clad ceramic sheet 103, and the double-sided copper-clad ceramic sheet 103 to the copper frame 102 on the back, a total of three welding processes are required. Solder 105 introduces an increase in thermal resistance, and both process and material costs are higher. From the chip 101 to the copper frame 102, the thickness of the frame is to ensure the passage of a large current, so it cannot be thinned. The thickness of the ceramic sheet is 0.25~0.5mm. The thickness of the ceramic sheet directly affects the thermal resistance, so it should not be thick. The thickness of the double-sided copper clad ceramic sheet 103 is relatively fragile. The copper frame 102 on the back is for mounting with the heat sink, and ther...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides an internal insulation packaging structure and a process method thereof. The internal insulation packaging structure includes: a copper frame, the frame includes a chip carrier and a lead frame, and one side of the chip carrier is welded to the chip by solder; an insulating device, an insulating One side of the device is welded to the other side of the carrier table by solder, and the thickness of the insulating sheet at the part of the insulating device not welded to the carrier table is greater than the thickness of the insulating sheet at the part welded to the insulating device and the carrier table; plastic sealing material, another part of the insulating device One side is combined with the plastic sealing material, and the plastic sealing material surrounds the chip, the chip carrier and the insulating device, and exposes the metal part of the insulating device that is not welded with the chip carrier. The invention utilizes the thick edge treatment of the insulating material around the insulating device, increases the strength of the insulating sheet without increasing the thermal resistance, and does not need to set the bottom copper frame, saves a welding process and raw materials, and reduces the production cost and material cost. And it is easy to realize mass production.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to an inner insulating packaging structure and a process method for the inner insulating packaging structure. Background technique [0002] In the actual application of power device single-tube products, in the occasions with high heat dissipation requirements, it will be required to mount a radiator on the back of the discrete device. Then, in order to ensure the insulation performance of the power device in a high-voltage environment, it is necessary to adopt insulation measures during the manufacturing process. The lead frame is spaced apart from the heat sink. There are two general approaches: [0003] 1. Mount the ceramic chip on the back of the discrete device, but the disadvantage of this method is that the insulation performance of the ceramic chip is different, and a cumbersome inspection process is required. In addition, the ceramic chip is attached extern...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/24H01L23/31H01L23/367H01L21/50H01L21/56
CPCH01L21/50H01L21/56H01L23/24H01L23/3121H01L23/367H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014H01L2924/00
Inventor 戚丽娜俞义长赵善麒
Owner MACMIC SCIENCE & TECHNOLOGY CO LTD