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Vacuum device, vacuum control method and ion implantation equipment

A vacuum device and ion technology, which is applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of complex operation of ion vacuum gauges and long recovery time of ion implantation equipment, so as to shorten the recovery time and improve the service life , to prevent the effect of damage

Pending Publication Date: 2020-10-09
CHANGXIN MEMORY TECH INC
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AI Technical Summary

Problems solved by technology

[0005] However, when the existing ion vacuum gauge is abnormal, the equipment personnel need to turn off the vacuum pumps connected to the vacuum chamber one by one, and replace the ion vacuum gauge after the vacuum chamber is exhausted. After the vacuum pumps are turned on one by one, the ion vacuum gauge is turned on. The operation of replacing the ion vacuum gauge is complicated, which leads to a long time for the ion implantation equipment to restart.

Method used

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  • Vacuum device, vacuum control method and ion implantation equipment
  • Vacuum device, vacuum control method and ion implantation equipment
  • Vacuum device, vacuum control method and ion implantation equipment

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Embodiment Construction

[0035] As stated in the background technology, it takes a long time to replace the ion vacuum timer and reset it.

[0036] The study found that the existing ion vacuum gauge is directly connected to the vacuum chamber, and the ion vacuum gauge must continuously monitor the vacuum condition in the vacuum chamber. In addition, the ion implantation equipment needs regular maintenance, and the vacuum chamber needs to be checked repeatedly during regular maintenance. The ion vacuum gauge will be repeatedly exposed to the atmosphere and foreign matter, which will affect the ion vacuum gauge and cause the ion vacuum gauge to be abnormal or damaged. When the ion vacuum gauge is abnormal or damaged, the ion implantation equipment will stop the injection immediately. Personnel just must shut down, close relevant vacuum pump one by one (vacuum pump is connected with vacuum chamber, to guarantee the vacuum degree in the vacuum chamber), and the vacuum chamber is exhausted so that the press...

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Abstract

The invention discloses a vacuum device, a vacuum control method and ion implantation equipment. The vacuum device comprises a vacuum chamber; an isolating valve which is connected with the vacuum chamber; an ion vacuum gauge which is connected with the isolating valve and is suitable for sending out a vacuum gauge signal, wherein the vacuum gauge signal comprises a normal signal or an abnormal signal; and a control unit which is connected with the ion vacuum gauge and the isolating valve, and is suitable for receiving the abnormal signal or the normal signal sent by the ion vacuum gauge and controlling the isolating valve to be closed according to the abnormal signal or controlling the isolating valve to be opened according to the normal signal. According to the vacuum device, the servicelife of the ion vacuum gauge is prolonged, the operation steps for replacing the ion vacuum gauge are simplified, and the machine resetting time is greatly shortened.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a vacuum device, a vacuum control method and ion implantation equipment. Background technique [0002] Ion implantation is a technique for selectively implanting impurities into semiconductor materials. [0003] Currently, ion implantation equipment is usually used for ion implantation. The ion implantation equipment generally includes an ion source, a guiding device, and a vacuum chamber. The ion source is used to generate implanted ion beams. The vacuum chamber is used to maintain a vacuum environment and place The wafer to be implanted, the guiding device is used to guide and accelerate the ion beam generated by the ion source into the wafer. [0004] The degree of vacuum in the vacuum chamber will affect the state of the formed ion beam, thereby affecting the electrical properties and yield of the wafer after ion implantation. Currently, an ion vacuum gauge is usu...

Claims

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Application Information

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IPC IPC(8): H01J37/18H01J37/317
CPCH01J37/18H01J37/3171
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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