Material synthesizing system based on high-temperature and normal-pressure microwave plasma
A technology of microwave plasma and microwave plasma, which is applied in the direction of plasma, metal material coating process, gaseous chemical plating, etc., can solve the problems of weak growth control ability, low energy efficiency, and difficulty in cracking and activating precursors, so as to solve the problem of growth The effect of weak control and improved energy efficiency
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[0016] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.
[0017] figure 1 It is a structural schematic diagram of a specific embodiment of the material synthesis system based on high temperature and atmospheric pressure microwave plasma of the present invention.
[0018] In this example, if figure 1 As shown, the material synthesis system based on high temperature and atmospheric pressure microwave plasma of the present invention includes two parts: high temperature and normal pressure microwave plasma torch generation system and material growth and control system (divided by black thick solid line, left is high temperature and n...
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