Material synthesizing system based on high-temperature and normal-pressure microwave plasma

A technology of microwave plasma and microwave plasma, which is applied in the direction of plasma, metal material coating process, gaseous chemical plating, etc., can solve the problems of weak growth control ability, low energy efficiency, and difficulty in cracking and activating precursors, so as to solve the problem of growth The effect of weak control and improved energy efficiency

Inactive Publication Date: 2020-10-13
CHENGDU LANDMARKS TECH CO LTD
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a material synthesis system based on high-temperature and atmospheric-pressure microwave plasma to solve the problems of difficult cracking and activation of precursors, weak growth control ability, and low energy efficiency in material synthesis, and realize the utilization of Different forms and different types of precursors for rapid synthesis of new materials

Method used

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  • Material synthesizing system based on high-temperature and normal-pressure microwave plasma
  • Material synthesizing system based on high-temperature and normal-pressure microwave plasma
  • Material synthesizing system based on high-temperature and normal-pressure microwave plasma

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Embodiment Construction

[0016] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.

[0017] figure 1 It is a structural schematic diagram of a specific embodiment of the material synthesis system based on high temperature and atmospheric pressure microwave plasma of the present invention.

[0018] In this example, if figure 1 As shown, the material synthesis system based on high temperature and atmospheric pressure microwave plasma of the present invention includes two parts: high temperature and normal pressure microwave plasma torch generation system and material growth and control system (divided by black thick solid line, left is high temperature and n...

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Abstract

The invention discloses a material synthesizing system based on high-temperature and normal-pressure microwave plasma. In a high-temperature and normal-pressure microwave plasma torch generation system, an ignition control electrode gets close to a hollow conductor output end, point breakdown happens under the large-power microwave effect, due to carrier gas flow output by a center conductor and carrying precursor materials, point discharge happens under the large-power microwave effect, and a stable high-temperature and normal-temperature plasma torch is formed. The precursor materials are split into active particle beams through the high-temperature and normal-temperature plasma torch, and active particles are provided for material growth and synthesis. In a material growth and control system, a metal ring and the ignition control electrode form adjustable electrostatic field distribution in a material growth area under the control of an external adjustable direct-current power source, the moving state of the active particle beams is changed under the effect of an adjustable electrostatic field, and therefore the moving speed or component proportion of positive and negative ionsor electrons or particles in the active particle beams is controlled, controllability of the material growth process is achieved, and the problem that the growth control force is weak is solved.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma and material synthesis, and more specifically relates to a material synthesis system based on high-temperature and atmospheric-pressure microwave plasma, that is, a technology for synthesizing new materials by using high-temperature and atmospheric-pressure microwave plasma torch. Background technique [0002] The development of new materials has always been a research hotspot in cutting-edge science. New structural materials represented by zero-dimensional, one-dimensional, and two-dimensional nanomaterials have become the target of people's pursuit due to their excellent mechanical, electrical, and thermal properties. They are indispensable for next-generation information systems, energy storage systems, and coating materials. It has a very attractive application prospect in terms of high speed, low energy consumption, large-scale components and new sensors. At the same time, the excel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/517H05H1/34H05H1/28
CPCC23C16/517H05H1/34H05H1/28H05H1/30H05H1/03
Inventor 白野李大帅
Owner CHENGDU LANDMARKS TECH CO LTD
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