Unlock instant, AI-driven research and patent intelligence for your innovation.
Resistor based on carbon film nano conductive material and preparation method thereof
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of nano-conductivity and resistors, which is applied in the coating process of metal materials, the use of electrical devices, the use of electromagnetic means, etc., can solve the problems of poor wear resistance and poor reliability of sensors, and achieve excellent solvent resistance, adjustable conductivity, and processing high precision effect
Active Publication Date: 2022-01-07
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
View PDF23 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0004] The purpose of the present invention is to solve the problem of poor wear resistance of the existing conductive plastic potentiometric displacement sensor, which leads to poor reliability of the sensor, and provides a resistor based on carbon film nano conductive material and its preparation method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
specific Embodiment approach 1
[0025] Specific implementation mode one: the following combination figure 1 Describe this embodiment mode, the resistor body based on carbon film nano conductive material described in this embodiment mode, is characterized in that, it comprises substrate ceramics 1, resistance film 2, metal pad 3 and signal lead-out hole 4;
[0026] The substrate ceramic 1 has a ring-shaped structure, and a metal pad 3 with an opening is printed on the inner surface of the ring of the substrate ceramic 1, and a signal lead-out hole 4 is provided on the substrate ceramic 1 at the opening of the metal pad 3. A resistive film 2 is prepared on the outer surface of the substrate ceramic 1;
[0027] The resistive thin film 2 is a carbon film nano-conductive material prepared based on a carbon-constantan double-target co-sputtering method.
specific Embodiment approach 2
[0028] Specific implementation mode two: the following combination figure 1 , figure 2 with image 3 Describe this embodiment, the preparation method of the resistor body based on the carbon film nano conductive material described in this embodiment, the preparation method is used to prepare the resistor body based on the carbon film nano conductive material, the preparation method includes:
[0029] S1. Using a cast platform to prepare the ceramic powder into a cast film, and then use a cutting machine to cut it into a substrate ceramic 1 according to the set size;
[0030] S2. Making a via hole on the substrate ceramic 1 prepared in S1, and filling the via hole with metal paste to form a signal lead-out hole 4;
[0031] S3, the metal pad 3 is screen-printed, and then sintered to form a cooked porcelain substrate;
[0032] S4. Put the cooked porcelain substrate obtained in S3 into the vacuum coating chamber, and prepare the resistive film 2 of carbon film nano conductive ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
particle size
aaaaa
aaaaa
thickness
aaaaa
aaaaa
Login to View More
Abstract
A resistor body based on a carbon film nano conductive material and a preparation method thereof belong to the technical field of sensor preparation. The invention aims to solve the problem of poor wear resistance of the existing conductive plastic potentiometric displacement sensor, which leads to poor reliability of the sensor. According to the present invention, the resistor body based on carbon film nano-conductive material comprises substrate ceramics, resistor films, metal pads and signal lead-out holes; A metal pad with an opening is printed, and a signal lead-out hole is provided on the substrate ceramic at the opening of the metal pad, and a resistive film is prepared on the outer surface of the substrate ceramic; the resistive film is based on carbon-constantan double-target co-sputtering Carbon film nano conductive material prepared by radiation method. The invention is used for the preparation of resistors.
Description
technical field [0001] The invention relates to a resistor body based on a carbon film nano conductive material and a preparation method thereof, belonging to the technical field of sensor preparation. Background technique [0002] As the cutting-edge technology of modern science and technology, sensor is considered to be one of the three pillars of modern information technology, and it is also recognized as the most promising high-tech industry at home and abroad. The displacement sensor is one of the most widely used types in the sensor family and has always played an important role. According to different motion modes, displacement sensors are divided into linear displacement sensors and angular displacement sensors. According to different measurement principles, they can be divided into potential type, inductive type, capacitive type, differential transformer type, eddy current type and so on. Among them, the potentiometric displacement sensor is widely used in aerospac...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/00G01B7/30C23C14/06C23C14/35
CPCG01B7/00G01B7/30C23C14/0605C23C14/352
Inventor 咸婉婷徐冬王洋洋张伟岩刘志远刘继江兰昕昊李旭辉杨思远宋成君
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
Login to View More