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Light-emitting display device and preparation method thereof and display device

A technology for light-emitting display devices and light-emitting layers, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems that can no longer meet the needs

Pending Publication Date: 2020-10-16
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The light-emitting layer in organic electroluminescent display devices usually includes host materials and guest materials. At present, fluorescent guest materials are mainly used with a single host material. With the increasing requirements for luminous efficiency and lifetime, existing materials can no longer To meet the demand, it is urgent to develop new light-emitting layer materials

Method used

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  • Light-emitting display device and preparation method thereof and display device
  • Light-emitting display device and preparation method thereof and display device
  • Light-emitting display device and preparation method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A method for preparing a light-emitting display device, comprising:

[0045] Under the condition that the degree of vacuum is 1×10-5Pa, an anode is formed on the glass substrate, the material of the anode is indium tin oxide (ITO), and the film thickness of the anode is 100nm;

[0046] The compound 1 is vapor-deposited on the anode by a vacuum evaporation method, so that the compound 1 forms a hole injection layer, and the film thickness of the hole injection layer is 5 nm;

[0047] By vacuum evaporation, compound 2 is evaporated on the hole injection layer, so that compound 2 forms a hole transport layer, and the film thickness of the hole transport layer is 50nm;

[0048] Compound A and compound B were co-evaporated on the hole transport layer by vacuum evaporation method, so that compound A and compound B formed a light-emitting layer, and the film thickness of the light-emitting layer was 35 nm. The mass percentage of compound A in the light-emitting layer is 50%, ...

Embodiment 2

[0057] An embodiment of the present invention provides a method for manufacturing a light-emitting display device, including:

[0058] Under the condition that the degree of vacuum is 1×10-5Pa, an anode is formed on the glass substrate, the material of the anode is indium tin oxide (ITO), and the film thickness of the anode is 100nm;

[0059] The compound 1 is vapor-deposited on the anode by a vacuum evaporation method, so that the compound 1 forms a hole injection layer, and the film thickness of the hole injection layer is 5 nm;

[0060] By vacuum evaporation, compound A is vapor-deposited on the hole injection layer, so that compound A forms a hole transport layer, and the film thickness of the hole transport layer is 50nm;

[0061] Compound A, compound B, and compound C were co-evaporated on the hole transport layer by vacuum evaporation, so that compound A, compound B, and compound C formed a light-emitting layer, and the film thickness of the light-emitting layer was 35 ...

Embodiment 3

[0070] An embodiment of the present invention provides a method for manufacturing a light-emitting display device, including:

[0071] Under the condition that the degree of vacuum is 1×10-5Pa, an anode is formed on the glass substrate, the material of the anode is indium tin oxide (ITO), and the film thickness of the anode is 100nm;

[0072] The compound 1 is vapor-deposited on the anode by a vacuum evaporation method, so that the compound 1 forms a hole injection layer, and the film thickness of the hole injection layer is 5 nm;

[0073] By vacuum evaporation, compound 2 is evaporated on the hole injection layer, so that compound 2 forms a hole transport layer, and the film thickness of the hole transport layer is 50nm;

[0074] Compound A, compound B, and compound C were co-evaporated on the hole transport layer by vacuum evaporation, so that compound A, compound B, and compound C formed a light-emitting layer, and the film thickness of the light-emitting layer was 35 nm. ...

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Abstract

The invention provides a light-emitting display device and a preparation method thereof and a display device. The light-emitting display device comprises a cathode, an anode and a light-emitting layerlocated between the cathode and the anode. The light-emitting layer at least comprises a compound A, a compound B and a compound C, the compound A and the compound B are compounded to form an exciplex, the compound C is used as a host compound, and the exciplex is dispersed in the compound C.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light-emitting display device, a preparation method thereof, and a display device. Background technique [0002] Organic electroluminescent display (OLED), as a new generation of display technology, has the advantages of ultra-thin, self-luminous, wide viewing angle, fast response, high luminous efficiency, good temperature adaptability, simple production process, low driving voltage, low energy consumption, etc. It has been widely used in industries such as flat panel display, flexible display, solid state lighting and vehicle display. [0003] The light-emitting layer in organic electroluminescent display devices usually includes host materials and guest materials. At present, fluorescent guest materials are mainly used with a single host material. With the increasing requirements for luminous efficiency and lifetime, existing materials can no longer To meet the demand, it ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/56H01L27/32
CPCH10K59/12H10K50/12H10K71/00
Inventor 张东旭高荣荣
Owner BOE TECH GRP CO LTD
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