Continuous self-cleaning glass substrate growth equipment

Abstract

The invention discloses continuous self-cleaning glass substrate growth equipment which comprises a feeding and receiving transition cabin mechanism, an air cylinder pushing mechanism, a quartz tube,a first heating furnace, a second heating furnace and an equipment frame. The quartz tube is cylindrical and is fixedly arranged on the equipment frame; the feeding and receiving transition cabin mechanism comprises a discharging cabin, a receiving cabin and a quartz tube; the bottoms of the two ends of the quartz tube are fixedly connected with the equipment frame through supporting frames. The wall portion of one end of the quartz tube is communicated with a discharging bin through a flange, a first gate valve is arranged at the joint of the flange, a first air cylinder is arranged at the end of the discharging bin, and the first air cylinder is connected with a first push rod extending into a cavity of the discharging bin. The equipment is an innovative invention developed on the basisof a carbon dioxide etching method, has the characteristics of simplicity, mildness, low cost and releasability through the carbon dioxide etching method, and is very suitable for large-area and low-cost batch preparation of the ultra-clean graphene film.

Description

technical field [0001] The invention relates to the technical field of graphene growth equipment, in particular to a continuous self-cleaning glass substrate growth equipment, which is suitable for large-area and low-cost batch preparation of ultra-clean graphene films, and the prepared graphene films have more excellent optical and electrical properties . Background technique [0002] When a general CVD equipment system grows a film, the film is prepared by an external heating furnace. The film thus obtained is not clean enough, the purity is not high enough, and there are many by-products. There are still a large amount of amorphous on the surface of the graphene film on the substrate. Carbon pollutants, the presence of these pollutants lead to a significant decrease in the light transmittance and electrical conductivity of graphene, which severely limits the imaging and observation range of graphene as a transmission grid substrate. Therefore, how to prepare clean and po...

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Problems solved by technology

[0003] The existing film growth CVD equipment system and technology mainly adopts the vapor phase deposition method to continuously and rapidly prepare large-area, high-quality films, CVD coating, and feed the required raw material gas into the cavity. After heating and cooling by the temperature field, on the substrate Rapidly prepare a large-area film on the surface; put the substrate into the furnace, pass in hydrogen and argon or nitrogen to protect and heat up to about 1000°C, and change the protective gas to carbon source gas at constant temperature. After 30 minutes, the reaction is complete. Cut off the power and cut off the carbon source gas, and pass in protective gas until it is cooled and taken out; although this method is effective, the resulting film is not pure enough, and the purity is not high enough; based on the fact that the amorphous carbon pollutants on the surface of graphene are rich in defects Therefore, it has the characteristics of high chemical reactivity. The weak oxidant carbon dioxide is selected to achieve highly selective etching of amorphous carbon pollutants on the surface of graphene film without causing additional damage to the graphene structure.

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