Magnetic random access memory and preparation method thereof

A random access memory and directional technology, which is applied in the field of semiconductor storage structures, can solve the problems of large write power consumption and large current required for flipping, and achieve the effect of reducing write current and write power consumption

Active Publication Date: 2022-07-08
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic random access memory and its preparation method, which is used to solve the problem of magnetic tunnel junction structure reversal in the magnetic random access memory in the prior art. The current is large, which leads to the problem of large write power consumption

Method used

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  • Magnetic random access memory and preparation method thereof
  • Magnetic random access memory and preparation method thereof
  • Magnetic random access memory and preparation method thereof

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Embodiment 1

[0074] see figure 1 , the present invention provides a preparation method of magnetic random access memory, the preparation method of magnetic random access memory comprises the steps:

[0075] 1) Provide a substrate;

[0076] 2) A write bit line and a bottom edge of the U-shaped variable magnet connection structure are formed on the upper surface of the substrate, one end of the bottom edge is connected to the write bit line, and the bottom edge is along the extending in a first direction, the write bit line extending along a second direction, and the first direction is perpendicular to the second direction;

[0077] 3) An insulating dielectric layer is formed on the upper surface of the substrate, the surface of the writing bit line and the surface of the bottom edge, the insulating dielectric layer covers the upper surface of the substrate, the writing the surface of the bit line and the surface of the bottom edge;

[0078] 4) A read bit line is formed on the upper surfa...

Embodiment 2

[0129] please combine Figure 2 to Figure 11 see Figure 12 , the present invention also provides a magnetic random access memory, the magnetic random access memory includes: a magnetic tunnel junction structure 15; a word line 18, the word line 18 is connected to the top of the magnetic tunnel junction structure 15, And the word line extends along a first direction, and the first direction is perpendicular to the height direction of the magnetic tunnel junction structure 15 ; read the bit line 14 , the read bit line 14 and the magnetic tunnel junction structure 15 is in contact with the bottom, and the read bit line 14 extends in a second direction, and the second direction is perpendicular to the height direction of the magnetic tunnel junction structure 15 and the first direction; the write bit line 11. The writing word line 11 is located on one side of the reading bit line 14, and the writing word line 11 and the reading bit line 14 have a distance; the writing bit line 1...

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Abstract

The invention provides a magnetic random access memory and a preparation method thereof, comprising: a magnetic tunnel junction structure; a word line, which is connected to the top of the magnetic tunnel junction structure; a read bit line, which is in contact with the bottom of the magnetic tunnel junction structure; The write bit line is located on one side of the read bit line; the U-shaped variable magnet connection structure includes a bottom edge, a side wall and an extension; the bottom edge is located below the read bit line, and one end is opposite to the write bit line connected, and the other end straddles the read bit line along the first direction; the sidewall portions are respectively located on opposite sides of the magnetic tunnel junction structure, and the top of the sidewall portion on the side of the magnetic tunnel junction structure away from the extension portion is connected to the word line The bottom of the sidewall portion is connected with the bottom edge portion; one end of the extension portion is connected with the sidewall portion, and the other end extends from the sidewall portion along the first direction to the direction away from the magnetic tunnel junction structure. The magnetic random access memory of the present invention reduces the current required for inversion of the magnetic tunnel junction structure, thereby reducing the required writing current and writing power consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage structures, and in particular relates to a magnetic random access memory and a preparation method thereof. Background technique [0002] Existing magnetic random access memories include several magnetic tunnel junction structures (MTJs) as memory cells in which the magnetic state of the free ferromagnetic layer can depend on the current flow of the word and bit lines connected to it induced magnetic field. The existing magnetic random access memory has the problem that the current required for inversion of the magnetic tunnel junction structure is relatively large, which leads to the problem that the required writing power consumption is relatively high. SUMMARY OF THE INVENTION [0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic random access memory and a preparation method thereof, which are used to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/02H01L43/12
CPCG11C11/02H10N50/01
Inventor 黄嘉晔俞文杰刘强
Owner SHANGHAI IND U TECH RES INST
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