Magnetic random access memory and preparation method thereof

A random access memory and directional technology, which is applied in the field of semiconductor storage structures, can solve the problems of large write power consumption and large current required for flipping, and achieve the effect of reducing write current and write power consumption
CN111833930BActive Publication Date: 2022-07-08SHANGHAI IND U TECH RES INST
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI IND U TECH RES INST
Publication Date
2022-07-08

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Abstract

The invention provides a magnetic random access memory and a preparation method thereof, comprising: a magnetic tunnel junction structure; a word line, which is connected to the top of the magnetic tunnel junction structure; a read bit line, which is in contact with the bottom of the magnetic tunnel junction structure; The write bit line is located on one side of the read bit line; the U-shaped variable magnet connection structure includes a bottom edge, a side wall and an extension; the bottom edge is located below the read bit line, and one end is opposite to the write bit line connected, and the other end straddles the read bit line along the first direction; the sidewall portions are respectively located on opposite sides of the magnetic tunnel junction structure, and the top of the sidewall portion on the side of the magnetic tunnel junction structure away from the extension portion is connected to the word line The bottom of the sidewall portion is connected with the bottom edge portion; one end of the extension portion is connected with the sidewall portion, and the other end extends from the sidewall portion along the first direction to the direction away from the magnetic tunnel junction structure. The magnetic random access memory of the present invention reduces the current required for inversion of the magnetic tunnel junction structure, thereby reducing the required writing current and writing power consumption.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor storage structures, and in particular relates to a magnetic random access memory and a preparation method thereof. Background technique

[0002] Existing magnetic random access memories include several magnetic tunnel junction structures (MTJs) as memory cells in which the magnetic state of the free ferromagnetic layer can depend on the current flow of the word and bit lines connected to it induced magnetic field. The existing magnetic random access memory has the problem that the current required for inversion of the magnetic tunnel junction structure is relatively large, which leads to the problem that the required writing power consumption is relatively high. SUMMARY OF THE INVENTION

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic random access memory and a preparation method thereof, which are used to...

Claims

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