Integrated circuit and manufacturing method thereof

Abstract

The invention provides an integrated circuit, which includes a substrate, a plurality of first gate structures, a compliant protection layer, a second gate structure, a source electrode region, and adrain electrode region, wherein the substrate has a cell region and a peripheral region, the plurality of first gate structures are disposed in the cell region, the compliant protective layer covers the top surface and the side wall of each first gate structure, the second gate structure is disposed in the peripheral region, and the source electrode region and the drain electrode region are disposed in the substrate on both sides of the second gate structure. The invention further provides a manufacturing method of the integrated circuit. According to the invention, the first gate structure can be protected from interference of moving ions, and damage of the moving ions to the component is avoided; and the diffusion of the source electrode region and the drain electrode region can be effectively controlled, and the assembly of the peripheral region is controlled at a relatively small gate length, so that the assembly size of the peripheral region in the integrated circuit can be reduced.

Description

technical field [0001] The invention relates to an integrated circuit and a manufacturing method thereof, in particular to an integrated circuit capable of effectively reducing the size and a manufacturing method thereof. Background technique [0002] With the rapid development of science and technology, in order to meet the needs of reducing costs and simplifying process steps, semiconductor components integrate smaller components (such as logic components) into the peripheral region of the integrated circuit, thereby reducing the size of the peripheral region of the integrated circuit. Gradually become a trend. [0003] However, taking flash memory (flash) as an example, because most of the flash memory technology is a high-temperature process, and components with smaller dimensions (such as logic components) usually need to use a low-temperature process, if the logic components are to be integrated into the flash memory If there is a peripheral region, the source region ...

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Problems solved by technology

[0003] However, taking flash memory (flash) as an example, because most of the flash memory technology is a high-temperature process, and components with smaller dimensions (such as logic components) usually need to use a low-temperature process, if the logic components are to be integrated into the flash memory If there is a peripheral region, the source region and the drain region of the logic device will be diffused due to the high-temperature process of the flash memory, and the size of the peripheral region components cannot be effectively controlled.

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