A preparation method of piezoelectric single crystal thin film with optimized surface uniformity
A piezoelectric single crystal, uniform surface technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc. The problem of uneven film, unusable film, etc., can achieve the effect of optimizing surface uniformity, short annealing time, and optimizing surface uniformity.
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Embodiment 1
[0038] The invention provides a method for preparing a piezoelectric single crystal thin film with optimized surface uniformity, refer to figure 1 , the preparation method of the piezoelectric single crystal thin film with optimized surface uniformity includes the following steps:
[0039] S1. Provide a piezoelectric single crystal wafer with an implanted surface;
[0040] S2. Perform ion implantation on the implantation surface of the piezoelectric single crystal wafer;
[0041] S3. Under the preset bonding temperature, the injection surface of the piezoelectric single crystal wafer is bonded to the support substrate to obtain a first wafer;
[0042] S4. Under the preset annealing temperature, the first wafer is subjected to annealing treatment, and the annealing treatment is used for the peeling and transfer of the piezoelectric single crystal film to obtain a second wafer having a piezoelectric single crystal film and a supporting substrate wafer;
[0043] S5. Post-proce...
Embodiment 2
[0050] The difference between this embodiment and Embodiment 1 is that the preset bonding temperature is different from the preset annealing temperature. The invention utilizes a high-temperature bonding process to bond the piezoelectric substrate and the supporting substrate at a high temperature, realizes the peeling and transfer of the thin film under the condition of tensile stress between the substrates under the condition of lower than the bonding temperature, and finally obtains Wafer-scale piezoelectric film with optimized film uniformity. The preset bonding temperature ranges from 100°C to 250°C, the preset annealing temperature ranges from 100°C to 250°C, and the duration of the annealing treatment ranges from 0.5h to 100h. Preferably, the preset bonding temperature ranges from 220° C. to 250° C., the preset annealing temperature ranges from 180° C. to 200° C., and the duration of the annealing treatment ranges from 1 h to 3 h. The preset bonding temperature should ...
Embodiment 3
[0055] The difference between this embodiment and the above-mentioned embodiment is that the preset bonding temperature is different from the preset annealing temperature. The invention utilizes a high-temperature bonding process to bond the piezoelectric substrate and the supporting substrate at a high temperature, realizes the peeling and transfer of the thin film under the condition of tensile stress between the substrates under the condition of lower than the bonding temperature, and finally obtains Wafer-scale piezoelectric film with optimized film uniformity. The difference between the preset bonding temperature and the preset annealing temperature is greater than or equal to 50°C and less than or equal to 100°C.
[0056] Piezoelectric single crystal wafers have one or two implantation surfaces. When the piezoelectric single crystal wafer has two injection surfaces, in step S2, specifically, one of the injection surfaces of the piezoelectric single crystal wafer is bond...
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